用于在复杂表面上使用（氨甲基氨乙基）苯乙基三甲氧基硅烷自组装膜进行无电金属化的阻挡层/种子系统
A barrier/seed system for electroless metallization on complex surfaces using (aminomethylaminoethyl)phenethyltrimethoxysilane self-assembled films
摘要：
高频信号沿着导体的边缘传播。如果导体是电镀的，则种子层形成至少一个边缘，因此必须小心以确保这些层的电气质量。在这项工作中，我们研究的初始质量SAM为基础的种子层，是兼容的复杂的表面，包括硅通孔（TSV），用于过孔后的三维半导体器件封装。籽晶金属的保形和电气质量是非常重要的。对于多功能晶种层来说，同样重要的是其作为阻挡层的能力，其保护衬底免受沉积金属的高温扩散。因此，阻挡层必须足够坚固以承受扩散，但又足够薄以提供允许金属种子层沉积的保形表面。标准的阻挡层沉积方法（例如蒸发或溅射）需要来自源的视线或足够大的纵横比以提供来自结构内的背景气体的散射以涂覆所有表面。电化学和化学气相沉积提供了替代方案，但出现了关于污染和与射频或高速数字信号的兼容性的问题。我们提出了一种基于芳香族自组装单分子层（SAM）的阻挡层，用于无电铜种子层沉积。SAM阻挡层的生存能力由沉积的铜种子膜的质量决定，通过薄膜电阻率定量判断，通过表面粘附和诸如裂纹和气泡的形态特性定性判断。洞察问题的起源和最佳方案进行了说明。建议用作光刻胶层的扩展。我们用于TSV应用的SAM方法产生了一种“智能”种子层，可用于“简单”、扇形、易于制造的通孔。
英文摘要：
High frequency signals propagate along the edges of conductors. If the conductors are electroplated, then the seed layer forms at least one edge, so care must be taken to insure the electrical quality of these layers. In this work, we study the initial quality of SAM-based seed layers that are compatible with complex surfaces including through-silicon vias (TSVs), as are used in via-last three-dimensional semiconductor device packaging. The conformal and electrical quality of the seed metal is very important. Also important for a multifunction seed layer is its ability as a barrier layer, which protects the substrate from high temperature diffusion of the deposited metal. Thus, the barrier layer must be robust enough to withstand diffusion, yet thin enough to provide a conformal surface that allows metal seed layer deposition. Standard barrier layer deposition methods such as evaporation or sputtering require either a line of sight from the source or aspect ratios large enough to provide scattering from the background gas within the structure to coat all surfaces. Electrochemical and chemical vapor deposition provide alternatives, but concerns arise about contamination and compatibility with radio frequency or high-speed digital signals. We propose a barrier layer based on an aromatic self-assembled monolayer (SAM) for use in electroless copper seed layer deposition. The viability of the SAM barrier layer is determined by the quality of the deposited copper seed film, judged quantitatively by thin film resistivity and qualitatively by surface adhesion and morphological properties such as cracks and bubbles. Insights to the origins of problems and an optimal scheme are described. Extensions for use as a photolithographic resist layer are suggested. Our SAM approach for TSV applications yields a 'smart' seed layer that can be used with a 'simple,' scalloped, easy to fabricate, via hole.
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