阿秒快内光电发射
Attosecond-fast internal photoemission
摘要：
光电效应有一个与光电子学相关的姐妹过程，称为内部光电发射。在这里，电子从金属光发射到半导体中。虽然光电效应发生在不到100阿秒的时间内，但阿秒的时间尺度迄今为止还没有被测量为内部光电发射。基于新的方法CHARge转移时间测量通过激光脉冲持续时间依赖的饱和通量测定，CHAMELEON，我们表明，原子级薄的半金属石墨烯耦合到体碳化硅，形成肖特基结，允许电荷转移时间快至（300 $\pm$ 200）阿秒。一个简单的量子力学模型模拟支持这些结果。该半金属-半导体界面具有3.3 PHz的电荷传输速率截止带宽，代表了第一个提供未来光波信号处理所需的速度和设计空间的功能性固态界面。
英文摘要：
The photoelectric effect has a sister process relevant in optoelectronics called internal photoemission. Here an electron is photoemitted from a metal into a semiconductor. While the photoelectric effect takes place within less than 100 attoseconds, the attosecond time scale has so far not been measured for internal photoemission. Based on the new method CHArge transfer time MEasurement via Laser pulse duration-dependent saturation fluEnce determinatiON, CHAMELEON, we show that the atomically thin semi-metal graphene coupled to bulk silicon carbide, forming a Schottky junction, allows charge transfer times as fast as (300 $\pm$ 200) attoseconds. These results are supported by a simple quantum mechanical model simulation. With the obtained cut-off bandwidth of 3.3 PHz for the charge transfer rate, this semimetal-semiconductor interface represents the first functional solid-state interface offering the speed and design space required for future light-wave signal processing.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
