Interlayer excitons (IXs) possess a much longer lifetime than intralayer excitons due to the spatial separation of the electrons and holes; hence, they have been pursued to create exciton condensates for decades. The recent emergence of two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs), and of their van der Waals heterostructures (HSs), in which two different 2D materials are layered together, has created new opportunities to study IXs. Here we present the observation of IX gases within two stacked structures consisting of hBN/WSe$_2$/hBN/p: WSe$_2$/hBN. The IX energy of the two different structures differed by 82 meV due to the different thickness of the hBN spacer layer between the TMD layers. We demonstrate that the lifetime of the IXs is shortened when the temperature and the pump power increase. We attribute this nonlinear behavior to an Auger process.
The optical spectra of vertically stacked MoSe$_2$/WSe$_2$ heterostructures contain additional 'interlayer' excitonic peaks that are absent in the individual monolayer materials and exhibit a significant spatial charge separation in out-of-plane direction. Extending on a previous study, we used a many-body perturbation theory approach to simulate and analyse the excitonic spectra of MoSe$_2$/WSe$_2$ heterobilayers with three stacking orders, considering both momentum-direct and momentum-indirect excitons. We find that the small oscillator strengths and corresponding optical responses of the in…
We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe2. We observe large interlayer current densities of 2 uA/um2 and 2.5 uA/um2, and peak-to-valley ratios approaching 4 and 6 at room temperature and 1.5 K, respectively, values that are comparable to epitaxially grown resonant tunneling heterostructures. An excellent agreement between theoretical calculations using a Lorentzian spectral function for the two-dimensional (2D) quasiparticle states, and the experimental data indicates th…
Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have recently attracted tremendous interest as potential valleytronic and nano-electronic materials, in addition to being well-known as excellent lubricants in the bulk. The interlayer van der Waals (vdW) coupling and low frequency phonon modes, and how they evolve with the number of layers, are important for both the mechanical and electrical properties of 2D TMDs. Here we uncover the ultra-low frequency interlayer breathing and shear modes in few-layer MoS2 and WSe2, prototypical layered TMDs, using both Raman spectroscopy …
Layered two-dimensional materials exhibit rich transport and optical phenomena in twisted or lattice-incommensurate heterostructures with spatial variations of interlayer hybridization arising from moiré interference effects. Here, we report experimental and theoretical studies of excitons in twisted heterobilayers and heterotrilayers of transition metal dichalcogenides. Using MoSe$_2$-WSe$_2$ stacks as representative realizations of twisted van der Waals bilayer and trilayer heterostructures, we observe contrasting optical signatures and interpret them in the theoretical framework of interlay…
Two-dimensional (2D) materials, such as graphene1, boron nitride2, and transition metal dichalcogenides (TMDs)3-5, have sparked wide interest in both device physics and technological applications at the atomic monolayer limit. These 2D monolayers can be stacked together with precise control to form novel van der Waals heterostructures for new functionalities2,6-9. One highly coveted but yet to be realized heterostructure is that of differing monolayer TMDs with type II band alignment10-12. Their application potential hinges on the fabrication, understanding, and control of bonded monolayers, w…
The nanoscale periodic potentials introduced by moiré patterns in semiconducting van der Waals (vdW) heterostructures provide a new platform for designing exciton superlattices. To realize these applications, a thorough understanding of the localization and delocalization of interlayer excitons in the moiré potentials is necessary. Here, we investigated interlayer exciton dynamics and transport modulated by the moiré potentials in WS$_2$-WSe$_2$ heterobilayers in time, space, and momentum domains using transient absorption microscopy combined with first-principles calculations. Experimental re…
Interlayer excitons in layered materials constitute a novel platform to study many-body phenomena arising from long-range interactions between quantum particles. The ability to localise individual interlayer excitons in potential energy traps is a key step towards simulating Hubbard physics in artificial lattices. Here, we demonstrate spatial localisation of long-lived interlayer excitons in a strongly confining trap array using a WS$_{2}$/WSe$_{2}$ heterostructure on a nanopatterned substrate. We detect long-lived interlayer excitons with lifetime approaching 0.2 ms and show that their confin…
We report on the far-field photoluminescence intensity distribution of interlayer excitons in MoSe$_{2}$-WSe$_{2}$ heterostacks as measured by back focal plane imaging in the temperature range between 1.7 K and 20 K. By comparing the data with an analytical model describing the dipolar emission pattern in a dielectric environment, we are able to obtain the relative contributions of the in- and out-of-plane transition dipole moments associated to the interlayer exciton photon emission. We determine the transition dipole moments for all observed interlayer exciton transitions to be (99 $\pm$ 1)%…
Photoexcited intralayer excitons in van der Waals heterostructures (vdWHs) with type-II band alignment have been observed to tunnel into interlayer excitons on ultrafast timescales. Such interlayer excitons have sufficiently long lifetimes that inducing dissociation with external in-plane electric fields becomes an attractive option of improving efficiency of photocurrent devices. In the present paper, we calculate interlayer exciton binding energies, Stark shifts, and dissociation rates for six different transition metal dichalcogenide (TMD) vdWHs using a numerical procedure based on exterior…
We investigate interlayer tunneling in heterostructures consisting of two tungsten diselenide (WSe2) monolayers with controlled rotational alignment, and separated by hexagonal boron nitride. In samples where the two WSe2 monolayers are rotationally aligned we observe resonant tunneling, manifested by a large conductance and negative differential resistance in the vicinity of zero interlayer bias, which stem from energy- and momentum-conserving tunneling. Because the spin-orbit coupling leads to coupled spin-valley degrees of freedom, the twist between the two WSe2 monolayers allows us to prob…
Two-dimensional (2D) heterostructures (HS) formed by transition-metal dichalcogenide (TMDC) monolayers offer a unique platform for the study of intralayer and interlayer excitons as well as moiré-pattern-induced features. Particularly, the dipolar charge-transfer exciton comprising an electron and a hole, which are confined to separate layers of 2D semiconductors and Coulomb-bound across the heterojunction interface, has drawn considerable attention in the research community. On the one hand, it bears significance for optoelectronic devices, e.g. in terms of charge carrier extraction from phot…
Two dimensional (2D) van der Waals heterostructures from transition metal dichalcogenide (TMDC) semiconductors show a new class of spatially separate excitons with extraordinary properties. The interlayer excitons (XI) have been studied extensively, yet the mechanisms that modulate XI are still not well understood. Here, we introduce several organic-layer-embedded hybrid heterostructures, MoS2/organic/WSe2, to study the binding energy of XI. We discover that the dielectric screening of the quasi-particle is reduced with organic molecules due to decreased dielectric constant and greater separat…
Van der Waals heterostructures (vdWH) provide an ideal playground for exploring light-matter interactions at the atomic scale. In particular, structures with a type-II band alignment can yield detailed insight into free carrier-to-photon conversion processes, which are central to e.g. solar cells and light emitting diodes. An important first step in describing such processes is to obtain the energies of the interlayer exciton states existing at the interface. Here we present a general first-principles method to compute the electronic quasi-particle (QP) band structure and excitonic binding ene…
Coherent coupling between excitons is at the heart of many-body interactions with transition metal dichalcogenide (TMD) heterostructures as an emergent platform for the investigation of these interactions. We employ multi-dimensional coherent spectroscopy on monolayer MoSe\textsubscript{2}/WSe\textsubscript{2} heterostructures and observe coherent coupling between excitons spatially localized in monolayer MoSe$_2$ and WSe$_2$. Through many-body spectroscopy, we further observe the absorption state arising from free interlayer electron-hole pairs. This observation yields a spectroscopic measure…
The availability of accessible fabrication methods based on deterministic transfer of atomically thin crystals has been essential for the rapid expansion of research into van der Waals heterostructures. An inherent issue of these techniques is the deformation of the polymer carrier film during the transfer, which can lead to highly non-uniform strain induced in the transferred two-dimensional material. Here, using a combination of optical spectroscopy, atomic force and Kelvin probe force microscopy, we show that the presence of nanometer scale wrinkles formed due to transfer-induced stress rel…
Coupling degrees of freedom of distinct nature plays a critical role in numerous physical phenomena. The recent emergence of layered materials provides a laboratory for studying the interplay between internal quantum degrees of freedom of electrons. Here, we report experimental signatures of new coupling phenomena connecting real spin with layer pseudospins in bilayer WSe2. In polarization-resolved photoluminescence measurements, we observe large spin orientation of neutral and charged excitons generated by both circularly and linearly polarized light, with a splitting of the trion spectrum in…
An emerging class of semiconductor heterostructures involves stacking discrete monolayers such as the transition metal dichalcogenides (TMDs) to form van der Waals heterostructures. In these structures, it is possible to create interlayer excitons (ILEs), spatially indirect, bound electron-hole pairs with the electron in one TMD layer and the hole in an adjacent layer. We are able to clearly resolve two distinct emission peaks separated by 24 meV from an ILE in a MoSe2/WSe2 heterostructure fabricated using state-of-the-art preparation techniques. These peaks have nearly equal intensity, indica…
Emerging photo-induced excitonic processes in transition metal dichalcogenide (TMD) heterobilayers, e.g., coupling, dephasing, and energy transfer of intra- and inter-layer excitons, allow new opportunities for ultrathin photonic devices. Yet, with the associated large degree of spatial heterogeneity, understanding and controlling their complex competing interactions at the nanoscale remains a challenge. Here, we present an all-round dynamic control of intra- and inter-layer excitonic processes in a WSe$_2$/Mo$_{0.5}$W$_{0.5}$Se$_2$ heterobilayer using multifunctional tip-enhanced photolumines…
Moire-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe2 Bilayers
Indian Institute of Technology Mandi（印度技术学院曼迪分校）；CSIR-National Physical Laboratory（印度科学工业研究理事会国家物理实验室）；Academy of Scientific and Innovative Research (AcSIR)（科学与创新研究学院）；Indian Institute of Science（印度科学学院）；National Institute of Material Science（国家物质科学研究所）
In this paper, we employ a fully microscopic approach to the study of interlayer excitons in hetero-bilayers. We use Fowler's and Karplus' method to access the dynamical polarizability of non--interacting interlayer excitons in a $\mathrm{WSe}_{2}/\mathrm{WS}_{2}$--based van der Waals heterostructure. Following from the calculation of the linear polarizability, we consider Svendsen's variational method to the calculation of the dynamic third--order polarizability. With this variational method, we study both two--photon absorption and third--harmonic generation processes for interlayer excitons…
Twisted layers of atomically thin two-dimensional materials realize a broad range of novel quantum materials with engineered optical and transport phenomena arising from spin and valley degrees of freedom and strong electron correlations in hybridized interlayer bands. Here, we report experimental and theoretical studies of WSe$_2$ homobilayers obtained in two stable configurations of 2H ($60^\circ$ twist) and 3R ($0^\circ$ twist) stackings by controlled chemical vapor synthesis of high-quality large-area crystals. Using optical absorption and photoluminescence spectroscopy at cryogenic temper…
Van der Waals heterostructures formed by stacking two-dimensional atomic crystals are a unique platform for exploring new phenomena and functionalities. Interlayer excitons, bound states of spatially separated electron-hole pairs in van der Waals heterostructures, have demonstrated potential for rich valley physics and optoelectronics applications, and been proposed to facilitate high-temperature superfluidity. Here, we demonstrate highly tunable layer-polarized excitons by an out-of-plane electric field in homo-bilayers of transition metal dichalcogenides. Continuous tuning from negative to p…
Layer-Dependent Interfacial Coupling and Exciton Pinning in WSe2/Graphene Heterostructures
Empa – Swiss Federal Laboratories for Materials Science and Technology（瑞士联邦材料科技研究所）；University of Basel（巴塞尔大学）；Swiss Nanoscience Institute, University of Basel（巴塞尔大学瑞士纳米科学研究所）；The Pennsylvania State University（宾夕法尼亚州立大学）
Vertically stacked van der Waals heterostructures constitute a promising platform for providing tailored band alignment with enhanced excitonic systems. Here we report observations of neutral and charged interlayer excitons in trilayer WSe2-MoSe2-WSe2 van der Waals heterostructures and their dynamics. The addition of a WSe2 layer in the trilayer leads to significantly higher photoluminescence quantum yields and tunable spectral resonance compared to its bilayer heterostructures at cryogenic temperatures. The observed enhancement in the photoluminescence quantum yield is due to significantly la…
Moiré potentials in two-dimensional materials have been proven to be of fundamental importance to fully understand the electronic structure of van der Waals heterostructures, from superconductivity to correlated excitonic states. However, understanding how the moiré phonons, so-called phasons, affect the properties of the system still remains an uncharted territory. In this work, we demonstrate how phasons are integral to properly describing and understanding low-temperature interlayer exciton diffusion in WS2/WSe2 heterostructure. We perform photoluminescence (PL) spectroscopy to understand h…
Vertical and lateral heterostructures of van der Waals materials provide tremendous flexibility for band structure engineering. Since electronic bands are sensitively affected by defects, strain, and interlayer coupling, the edge and heterojunction of these two-dimensional (2D) systems may exhibit novel physical properties, which can be fully revealed only by spatially resolved probes. Here, we report the spatial mapping of photoconductivity in a monolayer-bilayer WSe2 lateral heterostructure under multiple excitation lasers. As the photon energy increases, the light-induced conductivity detec…
Interlayer excitons (IXs) in hetero-bilayers of transition metal dichalcogenides (TMDs) represent an exciting emergent class of long-lived dipolar composite bosons in an atomically thin, near-ideal two-dimensional (2D) system. The long-range interactions that arise from the spatial separation of electrons and holes can give rise to novel quantum, as well as classical multi-particle correlation effects. In order to acquire a detailed understanding of the possible many-body effects, the fundamental interactions between individual IXs have to be studied. Here, we trap a tunable number of dipolar …
We reveal stacking-induced strong coupling between atomic motion and interlayer excitons through photocurrent measurements of WSe$_2$/MoSe$_2$ heterojunction photodiodes. Strong coupling manifests as pronounced periodic sidebands in the photocurrent spectrum in frequency windows close to the interlayer exciton resonances. The sidebands, which repeat over large swathes of the interlayer exciton photocurrent spectrum, occur in energy increments corresponding directly to a prominent vibrational mode of the heterojunction. Such periodic patterns, together with interlayer photoconductance oscillati…
Optoelectronic devices which allow rerouting, modulation and detection of the optical signals would be extremely beneficial for telecommunication technology. One of the most promising platforms for such devices are excitonic devices, as they offer very efficient coupling to light. Of especial importance are those based on indirect excitons, because of their long lifetime. Here we demonstrate excitonic transistor and router based on bilayer of WSe2. Due to their strong dipole moment, excitons in bilayer WSe2 can be controlled by transverse electric field. At the same time, unlike indirect excit…
Moiré superlattices open an unprecedented opportunity for tailoring interactions between quantum particles and their coupling to electromagnetic fields. Strong superlattice potential generates moiré minibands of excitons -- bound pairs of electrons and holes that reside either in a single layer (intralayer excitons) or two separate layers (interlayer excitons). The twist-angle-controlled interlayer hybridization of carriers can also mix the two types of excitons to combine the strengths of both. Here, we report a direct observation of spatially mixed moiré excitons in angle-aligned WSe2/WS2 an…
Accurately described excitonic properties of transition metal dichalcogenide heterobilayers (HBLs) are crucial to comprehend the optical response and the charge carrier dynamics of them. Excitons in multilayer systems posses inter or intralayer character whose spectral positions depend on their binding energy and the band alignment of the constituent single-layers. In this study, we report the electronic structure and the absorption spectra of MoS$_2$/WS$_2$ and MoSe$_2$/WSe$_2$ HBLs from first-principles calculations. We explore the spectral positions, binding energies and the origins of inte…
Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities and defects at the interfaces. Here we present the first systematic study of interfaces in van der Waals heterostructure using cross sectional scanning transmission electron microscope (STEM) imaging. By measuring interlayer separations and comparing these to density functional theory (DFT) calculations we find that pristine interfaces exist between hBN and MoS2 or WS2 fo…
Heterobilayers consisting of MoSe$_2$ and WSe$_2$ monolayers can host optically bright interlayer excitons with intriguing properties such as ultralong lifetimes and pronounced circular polarization of their photoluminescence due to valley polarization, which can be induced by circularly polarized excitation or applied magnetic fields. Here, we report on the observation of an intrinsic valley-magnetophonon resonance for localized interlayer excitons promoted by invervalley hole scattering. It leads to a resonant increase of the photoluminescence polarization degree at the same field of 24.2 Te…
ReS$_2$ has recently emerged as a new member in the rapidly growing family of two-dimensional materials. Unlike MoS$_2$ or WSe$_2$, the optical and electrical properties of ReS$_2$ are not isotropic due to the reduced symmetry of the crystal. Here, we present layer-dependent Raman measurements of ReS$_2$ samples ranging from monolayers to ten layers in the ultralow frequency regime. We observe layer breathing and shear modes which allow for easy assignment of the number of layers. Polarization-dependent measurements give further insight into the crystal structure and reveal an energetic shift …
Type-II heterostructures (HSs) are essential components of modern electronic and optoelectronic devices. Earlier studies have found that in type-II transition metal dichalcogenide (TMD) HSs, the dominating carrier relaxation pathway is the interlayer charge transfer (CT) mechanism. Here, this report shows that, in a type-II HS formed between monolayers of MoSe2 and ReS2, nonradiative energy transfer (ET) from higher to lower work function material (ReS2 to MoSe2) dominates over the traditional CT process with and without a charge-blocking interlayer. Without a charge-blocking interlayer, the H…
Coulomb bound electron-hole pairs, excitons, govern the optical properties of semi-conducting transition metal dichalcogenides like MoS$_2$ and WSe$_2$. We study optical transitions at the K-point for 2H homobilayer MoS$_2$ in Density Functional Theory (DFT) including excitonic effects and compare with reflectivity measurements in high quality samples encapsulated in hexagonal BN. In both calculated and measured spectra we find a strong interlayer exciton transition in energy between A and B intralayer excitons, observable for T$=4 -300$ K, whereas no such transition is observed for the monola…
Based on first-principles calculations, the materials properties (structural, electronic, vibrational, and optical properties) of out-of-plane heterostructures formed from the transiti on metal dichalcogenides, specifically MoS$_2$-WSe$_2$ and WS$_2$-MoSe$_2$ were investigated. The heterostructures of MoS$_2$-WSe$_2$ and WS$_2$-MoSe$_2$ are found to be direct and ind irect band gap semiconductors, respectively. However, a direct band gap in the WS$_2$-MoSe$_2$ heterostructure can be achieved by applying compressive strain. Furthermore, the excitoni c peaks in both monolayer and bilayer heteros…
Defect-free epitaxial growth of 2D materials is one of the holy grails for a successful integration of van der Waals (vdW) materials in the semiconductor industry. The large-area (quasi-)vdW epitaxy of layered 2D chalcogenides is consequently carefully being researched since these materials hold very promising properties for future nanoelectronic applications. The formation of defects such as stacking faults like 60o twins and consequently 60o grain boundaries is still of major concern for the defect-free epitaxial growth of 2D chalcogenides. Although growth strategies to overcome the occurren…
