arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1912.04069cond-mat.mes-hallcond-mat.mtrl-sci
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范德瓦耳斯过渡金属卤化物中单层极限下的Mott相

Mott phase in a van der Waals transition-metal halide at single layer limit

Lang Peng, Jianzhou Zhao, Gui-Yuan Hua, Min-Cai, Hui-Nan Xia, Yuan Yuan, Wen-Hao Zhang, Gang Xu, Ling-Xiao Zhao, Zeng-Wei Zhu, Tao Xiang, Ying-Shuang Fu

摘要:

二维材料提供了在单层极限下解开前所未有的有序态的机会。在这些有序状态中,莫特相很少被探索。在这里,我们报告了范德华碘化铬(II)(CrI 2)薄膜中的莫特相。采用分子束外延技术在石墨化的6 H-SiC(0001)衬底上生长了表面原子级平整、宏观尺寸均匀的高质量CrI 2薄膜。通过原位低温扫描隧道显微镜和光谱(STM/STS),我们发现,该薄膜具有高达3.2 eV的带隙,这是几乎与厚度无关。密度泛函和动态平均场论计算表明,CrI 2薄膜可能是一种具有铁磁有序基态的强莫特绝缘体. Mott相是由光谱带分裂,这是与扩展的哈伯德模型,并在电荷掺杂剂的间隙减少一致。我们的研究为研究单层极限下的关联电子态提供了一个平台。

英文摘要:

Two-dimensional materials offer opportunities for unravelling unprecedented ordered states at single layer limit. Among such ordered states, Mott phase is rarely explored. Here, we report the Mott phase in van der Waals chromium (II) iodide (CrI2) films. High quality CrI2 films with atomically flat surface and macro size are grown on graphitized 6H-SiC(0001) substrate by molecular beam epitaxy. By in situ low temperature scanning tunneling microscopy and spectroscopy (STM/STS), we reveal that the film has a band gap as large as ~3.2 eV, which is nearly thickness independent. Density functional plus dynamic mean field theory calculations suggest that CrI2 films may be a strong Mott insulator with a ferromagnetically ordered ground state. The Mott phase is corroborated by the spectral band splitting, that is consistent with the extended Hubbard model, and gap reduction at charge dopants. Our study provides a platform for studying correlated electron states at single layer limit.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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