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arXiv 1911.03376cond-mat.mtrl-sci
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黄铜矿半导体ZnSnP $_2$迁移电流的第一性原理计算

First principles calculation of shift current in chalcopyrite semiconductor ZnSnP$_2$

Banasree Sadhukhan, Yang Zhang, Rajyavardhan Ray, Jeroen van den Brink

摘要:

体光伏效应在没有反转对称性的材料中产生本征光电流。移位电流是与构成电子带的贝里相位相关的体光伏现象之一:由于价带和导带之间的贝里连接的差异,光激发载流子在实空间中相干移位。已知铁电半导体和Weyl半金属表现出这种非线性光学现象。在这里,我们考虑黄铜矿半导体ZnSnP $_2$,缺乏反转对称性和计算的移位电流电导率。我们发现,位移电流的大小是最近在其他铁电半导体上测量值和一个数量级大于铁酸铋。光电导和位移电流电导的峰值响应都在带隙以上几eV,主要来自P-3 $p$和Sn-5 $p$轨道。

英文摘要:

The bulk photovoltaic effect generates intrinsic photocurrents in materials without inversion symmetry. Shift current is one of the bulk photovoltaic phenomena related to the Berry phase of the constituting electronic bands: photo-excited carriers coherently shift in real space due to the difference in the Berry connection between the valence and conduction bands. Ferroelectric semiconductors and Weyl semimetals are known to exhibit such nonlinear optical phenomena. Here we consider chalcopyrite semiconductor ZnSnP$_2$ which lacks inversion symmetry and calculate the shift current conductivity. We find that the magnitude of the shift current is comparable to the recently measured values on other ferroelectric semiconductors and an order of magnitude larger than bismuth ferrite. The peak response for both optical and shift current conductivity, which mainly comes from P-3$p$ and Sn-5$p$ orbitals, is several eV above the bandgap.

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