宽带紫外照明近场相移接触光刻的电磁场模型
Electromagnetic modeling of near-field phase-shifting contact lithography with broadband ultraviolet illumination
摘要：
模拟了近场相移接触光刻技术，研究了一面与石英二元相移掩模接触的光刻胶层的电磁吸收特性。宽带紫外照明被表示为垂直入射平面波的频谱。进行严格的耦合波分析以确定光致抗蚀剂层的吸收光谱。光致抗蚀剂层中的特定吸收率的计算和检查的几何参数。在光致抗蚀剂层中的柱状特征与单色照明相比在宽带照明上具有更高的质量，与最近的一些实验结果一致。相移掩模中的凹槽深度显著影响特征分辨率和轮廓。理想地，对于横向磁模式中的宽带照射，特征线宽可以小于约100 nm。这些结论受到光致抗蚀剂的光化学波长特性的修改。
英文摘要：
Near-field phase-shifting contact lithography is modeled to characterize electromagnetic absorption in a photoresist layer with one face in contact with a quartz binary phase-shift mask. The broadband ultraviolet illumination is represented as a frequency-spectrum of normally incident plane waves. A rigorous coupled-wave analysis is carried out to determine the absorption spectrum of the photoresist layer. The specific absorption rate in the photoresist layer is calculated and examined in relation to the geometric parameters. Columnar features in the photoresist layer are of higher quality on broadband illumination in contrast to monochromatic illumination, in conformity with some recent experimental results. Feature resolution and profile are noticeably affected by the depth of the grooves in the phase-shift mask. Ideally, the feature linewidth can be less than about 100 nm for broadband illumination in the transverse-magnetic mode. These conclusions are subject to modification by the photochemistry-wavelength characteristics of the photoresist.
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