F.对“$Φ$ memristor：Real memristor found”的评论。Z.王湖，加-地利湖，加-地Shi，H. Wu和L. O. Chua [J. Appl. Phys. 125，054504（2019）]
Comment on "$Φ$ memristor: Real memristor found" by F. Z. Wang, L. Li, L. Shi, H. Wu, and L. O. Chua [J. Appl. Phys. 125, 054504 (2019)]
摘要：
Wang等人声称[J. Appl. Phys. 125，054504（2019）]，与磁芯相互作用的载流导线代表忆阻器。在这里，我们证明这种说法是错误的。我们首先表明，这种忆阻器的“发现”是基于不正确的物理学，它甚至没有捕捉磁芯材料的基本特性，如它们的磁滞。此外，王等人的预测。的模型与他们论文中提出的实验曲线相矛盾。此外，Wang等人提出的理论收缩磁滞回线如果使用他们的模型则不能再现，并且他们的“负忆阻器”仿真器设计存在严重缺陷。最后，一个简单的gedanken实验表明，所提出的$Φ$ -忆阻器将无法通过我们最近在J. Phys. D：Appl. Phys. 52，01 LT 01（2019）中提出的忆阻器测试。Wang等人“发现”的器件只是一个带记忆的电感器。
英文摘要：
Wang et al. claim [J. Appl. Phys. 125, 054504 (2019)] that a current-carrying wire interacting with a magnetic core represents a memristor. Here, we demonstrate that this claim is false. We first show that such memristor "discovery" is based on incorrect physics, which does not even capture basic properties of magnetic core materials, such as their magnetic hysteresis. Moreover, the predictions of Wang et al.'s model contradict the experimental curves presented in their paper. Additionally, the theoretical pinched hysteresis loops presented by Wang et al. can not be reproduced if their model is used, and there are serious flaws in their "negative memristor" emulator design. Finally, a simple gedanken experiment shows that the proposed $Φ$-memristor would fail the memristor test we recently suggested in J. Phys. D: Appl. Phys. 52, 01LT01 (2019). The device "discovered" by Wang et al. is just an inductor with memory.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
