稀土氮化物异质结构中的垂直输运和隧穿
Vertical transport and tunnelling in rare-earth nitride heterostructures
摘要：
本文报道了铁磁半导体稀土氮化物（RENs）在低温电子学和自旋电子学中的应用。我们已经确定了欧姆接触适合的设备结构，需要通过界面层的电子输运，并生长REN/绝缘体/REN异质结，显示隧道特性，一个巨大的400%的隧道磁阻和磁滞有希望在非易失性磁性随机存取存储器的开发。
英文摘要：
We report an investigation of the ferromagnetic semiconductor rare earth nitrides (RENs) for their potential for cryogenic-temperature electronics and spintronics application. We have indentified ohmic contacts suitable for the device structures that demand electron transport through interface layers, and grown REN/insulator/REN heterostructures that display tunnelling characteristics, an enormous 400% tunneling magnetoresistance and a hysteresis promising their exploitation in non-volatile magnetic random access memory.
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