等温密闭空间升华法增强ZnTe在多孔硅中的渗透
Enhanced ZnTe infiltration in porous silicon by Isothermal Close Space Sublimation
摘要：
采用等温近空间升华（ICSS）技术在多孔硅（PS）薄膜上嵌入ZnTe。研究了制备条件的影响，特别是在ZnTe生长之前的化学蚀刻步骤，对ZnTe嵌入PS的组成分布和最终孔隙率的影响。通过X射线衍射分析确定嵌入材料的结构，同时通过扫描电子显微镜（SEM）确定样品的厚度。卢瑟福背散射（RBS）和能量色散（EDS）光谱允许确定的组成分布。我们得出结论，在ZnTe生长之前，PS表面的蚀刻有两个主要的效果：孔隙率的增加和提高内表面的反应性。据观察，这两种效应都有利于孔隙的填充过程。由于RBS和EDS在本系统中不能检测孔隙度，我们通过拟合UV-VIS反射光谱来探索孔隙度的演变。用这种方法测定的原子百分比与从RBS和EDS测量获得的原子百分比相对较好地一致。
英文摘要：
Isothermal Close Space Sublimation (ICSS) technique was used for embedding porous silicon (PS) films with ZnTe. It was studied the influence of the preparation conditions and in particular of a chemical etching step before the ZnTe growth, on the composition profile and final porosity of ZnTe embedded PS. The structure of the embedded material was determined by x-ray diffraction analysis while the thickness of the samples was determined by scanning electron microscopy (SEM). Rutherford backscattering (RBS) and Energy Dispersive (EDS) spectrometries allowed determining the composition profiles. We conclude that the etching of the PS surface before the ZnTe growth has two main effects: the increase of the porosity and enhancing the reactivity of the inner surface. It was observed that both effects benefit the filling process of the pores. Since RBS and EDS cannot detect the porosity in the present system, we explore the evolution of porosity by the fitting of the UV-VIS reflectance spectra. The atomic percent determined with this method was in relatively good agreement with that obtained from the RBS and EDS measurements.
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