揭示石墨烯中的多铁邻近效应
Unveiling multiferroic proximity effect in graphene
摘要：
我们证明了石墨烯的电子和磁性可以通过多铁性衬底的接近来调节。我们的第一性原理计算在有和没有自旋轨道耦合的情况下都清楚地表明，通过将石墨烯与铋铁氧体BiFeO $_3$（BFO）膜接触，石墨烯的自旋相关电子结构受到下面的BFO中的磁序和电极化的强度的强烈影响。基于从石墨烯能带结构中提取的哈密顿参数，我们提出了一种基于探索多铁邻近效应引起的显著邻近电（PER），磁（PMR）和多铁（PMER）电阻效应的六电阻器件的概念。这一发现为二维材料中磁性的多铁性控制铺平了道路。
英文摘要：
We demonstrate that electronic and magnetic properties of graphene can be tuned via proximity of multiferroic substrate. Our first-principles calculations performed both with and without spin-orbit coupling clearly show that by contacting graphene with bismuth ferrite BiFeO$_3$ (BFO) film, the spin-dependent electronic structure of graphene is strongly impacted both by the magnetic order and by electric polarization in the underlying BFO. Based on extracted Hamiltonian parameters obtained from the graphene band structure, we propose a concept of six-resistance device based on exploring multiferroic proximity effect giving rise to significant proximity electro- (PER), magneto- (PMR), and multiferroic (PMER) resistance effects. This finding paves a way towards multiferroic control of magnetic properties in two dimensional materials.
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