钽间隔层厚度和沉积条件对MgO/CoFeB/Ta/CoFeB/MgO自由层性能的影响
Effect of Tantalum spacer thickness and deposition conditions on the properties of MgO/CoFeB/Ta/CoFeB/MgO free layers
摘要：
为了在小器件尺寸下获得稳定的垂直磁化隧道结，通常使用包括两个MgO/FeCoB界面作为界面各向异性源的复合自由层。通常通过在FeCoB层内插入前过渡金属系列的间隔层来确保适当的结晶和退火鲁棒性。我们研究的间隔物的厚度和生长条件上的开关度量的隧道结热退火在400 $^\circ$ C的情况下，1-4 μ m的Ta间隔物的影响。厚的Ta间隔物导致指示更好限定的顶部FeCoB/MgO界面的大的各向异性，但是这是以更强的阻尼的系统代价来实现的。对于最佳的各向异性阻尼折衷，直径为22 nm的结仍然可以是稳定的和自旋扭矩切换。矫顽力和不均匀的线宽加宽，可能会产生在FeCoB/Ta界面的粗糙度，可以减少，如果牺牲Mg层被插入之前的Ta间隔沉积。
英文摘要：
To get stable perpendicularly magnetized tunnel junctions at small device dimensions, composite free layers that comprise two MgO/FeCoB interfaces as sources of interface anisotropy are generally used. Proper cristallisation and annealing robustness is typically ensured by the insertion of a spacer layer of the early transition metal series within the FeCoB layer. We study the influence of the spacer thickness and growth condition on the switching metrics of tunnel junctions thermally annealed at 400$^\circ$C for the case of 1-4 Å Ta spacers. Thick Ta spacer results in a large anisotropies indicative of a better defined top FeCoB/MgO interface, but this is achieved at the systematic expense of a stronger damping. For the best anisotropy-damping compromise, junctions of diameter 22 nm can still be stable and spin-torque switched. Coercivity and inhomogeneous linewidth broadening, likely arising from roughness at the FeCoB/Ta interface, can be reduced if a sacrificial Mg layer is inserted before the Ta spacer deposition.
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