（Ga，Mn）As：Mn中p型共掺杂效应与磁性能的关系
p-type codoping effect in (Ga,Mn)As: Mn lattice location versus magnetic properties
摘要：
本文对（Ga，Mn）As的p型共掺杂进行了系统的研究。通过逐渐增加Zn掺杂浓度，空穴浓度增加，根据p-d Zener模型，这在理论上应导致居里温度（TC）的增加。出乎意料的是，尽管薄膜保持其外延结构，但TC和磁化强度都降低。随着空穴浓度的增加，样品呈现出从铁磁性到顺磁性的相变。在中间区域，我们观察到反铁磁性的特征。通过使用沟道卢瑟福背散射光谱和粒子诱导的X射线发射，观察到的替代Mn原子移动到间隙网站，而更多的Zn原子占据Ga网站，这解释了所观察到的行为。这也与第一性原理计算一致，表明置换Zn和间隙Mn的络合物具有最低的形成能。
英文摘要：
In the present work, we perform a systematic investigation on p-type codoping in (Ga,Mn)As. Through gradually increasing Zn doping concentration, the hole concentration increases, which should theoretically lead to an increase of the Curie temperature (TC) according to the p-d Zener model. Unexpectedly, although the film keeps its epitaxial structure, both TC and the magnetization decrease. The samples present a phase transition from ferromagnetism to paramagnetism upon increasing hole concentration. In the intermediate regime, we observe a signature of antiferromagnetism. By using channeling Rutherford backscattering spectrometry and particle-induced x-ray emission, the substitutional Mn atoms are observed to shift to interstitial sites, while more Zn atoms occupy Ga sites, which explains the observed behavior. This is also consistent with first-principles calculations, showing that the complex of substitutional Zn and interstitial Mn has the lowest formation energy.
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