Ta, Ti and Hf effects on Nb$_3$Sn high-field performance: temperature-dependent dopant occupancy and failure of Kramer extrapolation

英文摘要：

The increasing demand for improving the high-field (16-22 T) performance of Nb$_3$Sn conductors requires a better understanding of the properties of modern wires much closer to irreversibility field, H$_{Irr}$. In this study we investigated the impact of Ta, Ti and Hf doping on the high-field pinning properties, the upper critical field, H$_{c2}$, and H$_{Irr}$. We found that the pinning force curves of commercial Ti and Ta doped wires at different temperatures do not scale and that the Kramer extrapolation, typically used by magnet designers to estimate high-field critical current density and magnet operational margins from lower field data, is not reliable and significantly overestimates the actual H$_{Irr}$. In contrast, new laboratory scale conductors made with Nb-Ta-Hf alloy have improved high-field J$_c$ performance and, despite contributions by both grain boundary and point defect pinning mechanisms, have more predictable high-field behavior. Using Extended X-ray Absorption Fine Structure spectroscopy, EXAFS, we found that for the commercial Ta and Ti doped conductors, the Ta site occupancy in the A15 structure gradually changes with the heat treatment temperature whereas Ti is always located on the Nb site with clear consequences for H$_{c2}$. This work reveals the still limited understanding of what determines H$_{c2}$, H$_{Irr}$ and the high-field J$_c$ performance of Nb$_3$Sn and the complexity of optimizing these conductors so that they can reach their full potential for high-field applications.