Sn_{1-x} In_xTe超导体中的非平凡拓扑相
Non-Trivial Topological Phase in the Sn_{1-x}In_xTe Superconductor
摘要：
而SnTe是一种反向带隙拓扑晶体绝缘体，合金Sn_{1-x} In_xTe的拓扑相，拓扑超导体的候选者，至今还没有明确的研究。计算结果表明，随着In含量的增加，Sn_{1-x} In_xTe的带隙减小，当x>0.1时变为金属.然而，带隙和无隙相在fcc L点的带反转一直保持。此外，计算的拓扑不变量显示了一个非平凡的相位与镜像陈数n_M = -2的In浓度为x=0.03125，x=0.125，和x=0.25。在Sn_{1-x} In_xTe的（001）面上，我们还发现了具有+/- i镜像本征值的拓扑保护态对.这些拓扑态的性质受到In掺杂的影响。随着In含量x的增加，Dirac交叉点远离L点，拓扑态的费米速度显著增加.我们的结果证明了超导体Sn_{1-x} In_xTe的非平凡拓扑相，并提供了详细的拓扑态性质的描述.
英文摘要：
Whereas SnTe is a inverted band gap topological crystalline insulator, the topological phase of the alloy Sn_{1-x}In_xTe, a topological superconductor candidate, has not been clearly studied so far. Our calculations show that the Sn_{1-x}In_xTe band gap reduces by increasing the In content, becoming a metal for x>0.1. However, the band inversion at the fcc L point for both gapped and gapless phases has been maintained. Furthermore, the computed topological invariant shows a non-trivial phase with a mirror Chern number n_M = -2 for In concentrations of x=0.03125, x=0.125, and x=0.25. We also identify pairs of topologically protected states on the (001) surface of Sn_{1-x}In_xTe with +/- i mirror eigenvalues. The character of these topological states is affected by In dopant. As the In content x increases, the Dirac crossing point moves further away from the L point, and the Fermi velocity of the topological states increases significantly. Our results demonstrate a non-trivial topological phase for the superconductor Sn_{1-x}In_xTe, and provide a detailed description of the topological state properties.
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