CeRhIn $_5$和YbNi $_3$ Ga $_9$中$f$电子杂化态压力演化的对比研究
Contrasting pressure evolutions of $f$ electron hybridized states in CeRhIn$_5$ and YbNi$_3$Ga$_9$: an optical conductivity study
摘要：
在10 GPa的外压和6 K的低温下测量了CeRhIn $_5$和YbNi $_3$ Ga $_9$的光学电导率[ $σ(ω)$ ]。关于CeRhIn $_5$，在环境压力下，$σ(ω)$中的主要特征是由于自由载流子引起的Drude峰。然而，随着压力的增加，在$σ(ω)$中迅速形成特征中红外（mIR）峰，并且其峰能量和宽度随着压力而增加。这些功能是一致的，在高压下增加的传导（$c$）- $f$电子杂化，并表明，压力已调整的电子状态的CeRhIn $_5$从非常弱的强杂化。相反，对于YbNi $_3$ Ga $_9$，在环境压力下已经观察到显著的mIR峰，表明强的$c$-$f$杂化。然而，在高压下，mIR峰移动到较低的能量，并变得减少，似乎合并与德鲁德组件在10 GPa。即$_5$和$_3$在$σ(ω)$的压力演化和电子结构上表现出相反的趋势。这些结果进行了讨论的$c$-$f$杂化电子态的Ce和Yb化合物的压力演化，特别是在Ce和Yb化合物之间的电子-空穴对称性经常考虑。
英文摘要：
Optical conductivity [$σ(ω)$] of CeRhIn$_5$ and YbNi$_3$Ga$_9$ have been measured at external pressures to 10 GPa and at low temperatures to 6 K. Regarding CeRhIn$_5$, at ambient pressure the main feature in $σ(ω)$ is a Drude peak due to free carriers. With increasing pressure, however, a characteristic mid-infrared (mIR) peak rapidly develops in $σ(ω)$, and its peak energy and width increase with pressure. These features are consistent with an increased conduction ($c$)-$f$ electron hybridization at high pressure, and show that the pressure has tuned the electronic state of CeRhIn$_5$ from very weakly to strongly hybridized ones. As for YbNi$_3$Ga$_9$, in contrast, a marked mIR peak is observed already at ambient pressure, indicating a strong $c$-$f$ hybridization. At high pressures, however, the mIR peak shifts to lower energy and becomes diminished, and seems merged with the Drude component at 10 GPa. Namely, CeRhIn$_5$ and YbNi$_3$Ga$_9$ exhibit some opposite tendencies in the pressure evolutions of $σ(ω)$ and electronic structures. These results are discussed in terms of the pressure evolutions of $c$-$f$ hybridized electronic states in Ce and Yb compounds, in particular in terms of the electron-hole symmetry often considered between Ce and Yb compounds.
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