单散射体的投影准粒子干涉分析ZrSiS的电子能带结构
Projective Quasiparticle Interference of a Single Scatterer to Analyze the Electronic Band Structure of ZrSiS
摘要：
电子态的准粒子干涉（QPI）已广泛应用于扫描隧道显微镜（STM）中分析材料的电子能带结构。单缺陷诱导的量子干涉效应揭示了单原子缺陷与电子态之间的缺陷依赖性相互作用，值得特别关注。由于单缺陷引起的QPI信号较弱，在标准二维QPI测量中，信噪比（SNR）相对较低。本文介绍了一种投影准粒子干涉（PQPI）方法，该方法是沿着以特定缺陷为中心的高对称方向进行一维测量。我们将PQPI方法应用于拓扑线半金属ZrSiS。我们专注于两种特殊类型的原子缺陷，分散的表面和散装电子带。随着PQPI中SNR的增强，能量色散沿高对称方向被清楚地分辨。我们讨论了与缺陷相关的散射体带的非对称的双强制选择规则。此外，观察到的表面浮带的能量移动和一个新的分支的能量色散（q6）被解决。这种PQPI方法可以应用于其他复杂材料，以探索未来的缺陷相关的相互作用。
英文摘要：
Quasiparticle interference (QPI) of the electronic states has been widely applied in scanning tunneling microscopy (STM) to analyze the electronic band structure of materials. Single-defect induced QPI reveals defect-dependent interaction between a single atomic defect and electronic states, which deserves special attention. Due to the weak signal of single-defect-induced QPI, the signal-to-noise ratio (SNR) is relatively low in a standard two-dimensional QPI measurement. In this paper, we introduce a projective quasiparticle interference (PQPI) method, in which a one-dimensional measurement is taken along high-symmetry directions centered on a specified defect. We apply the PQPI method to a topological nodal-line semimetal ZrSiS. We focus on two special types of atomic defects that scatter the surface and bulk electronic bands. With enhanced SNR in PQPI, the energy dispersions are clearly resolved along high symmetry directions. We discuss the defect-dependent scattering of bulk bands with the non-symmorphic symmetry-enforced selection rules. Furthermore, an energy shift of the surface floating band is observed and a new branch of energy dispersion (q6) is resolved. This PQPI method can be applied to other complex materials to explore defect-dependent interactions in the future.
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