卤化物气相外延Si掺杂$β$ $_2$ O $_3$（010）薄膜的光学和结构特性
Optical and structural properties of Si doped $β$-Ga$_2$O$_3$ (010) thin films homoepitaxially grown by halide vapor phase epitaxy
摘要：
报道了在（010）取向的$β$ -Ga $_2$ O $_3$衬底上用HVPE法生长的Si掺杂的$β$-Ga $_2$ O $_3$薄膜的光学、电学和结构特性.我们的结果表明，尽管生长速率比MOCVD快一个数量级以上，但使用该技术可以在载流子浓度为1.3 $\times$ × 10 $^{17}$ cm $^{-3}$下获得迁移率值高达95 cm $^2$ V $^{-1}$ s $^{-1}$的膜，其中所有Si掺杂的样品显示出n型行为，载流子浓度在10 $^{17}$至10 $^{19}$ cm $^{-3}$的范围内。所有样品显示出相似的室温光致发光，只有具有最低载流子浓度的样品显示出蓝色发光的存在，并且拉曼光谱仅显示出属于$β$-Ga $_2$ O $_3$的声子模式，表明Ga $_2$ O $_3$膜是相纯的并且具有高晶体质量.我们进一步评估了薄膜的外延质量进行掠入射X射线散射测量，这使我们能够区分散装和薄膜的贡献。最后，使用ALD HfO $_2$制造MOS电容器以执行C-V测量。从C-V特性中提取的载流子浓度和介电值与霍尔探针测量结果吻合得很好。这些结果表明HVPE具有产生器件质量的$β$-Ga $_2$ O-$_3$膜的强大潜力，其可用于开发用于高功率电子应用的垂直器件。
英文摘要：
We report the optical, electrical, and structural properties of Si doped $β$-Ga$_2$O$_3$ films grown on (010)-oriented $β$-Ga$_2$O$_3$ substrate via HVPE. Our results show that, despite growth rates that are more than one order of magnitude faster than MOCVD, films with mobility values of up to 95 cm$^2$V$^{-1}$s$^{-1}$ at a carrier concentration of 1.3$\times$10$^{17}$ cm$^{-3}$ can be achieved using this technique, with all Si-doped samples showing n-type behavior with carrier concentrations in the range of 10$^{17}$ to 10$^{19}$ cm$^{-3}$. All samples showed similar room temperature photoluminescence, with only the samples with the lowest carrier concentration showing the presence of a blue luminescence, and the Raman spectra exhibiting only phonon modes that belong to $β$-Ga$_2$O$_3$, indicating that the Ga$_2$O$_3$ films are phase pure and of high crystal quality. We further evaluated the epitaxial quality of the films by carrying out grazing incidence X-ray scattering measurements, which allowed us to discriminate the bulk and film contributions. Finally, MOS capacitors were fabricated using ALD HfO$_2$ to perform C-V measurements. The carrier concentration and dielectric values extracted from the C-V characteristics are in good agreement with Hall probe measurements. These results indicate that HVPE has a strong potential to yield device-quality $β$-Ga$_2$O$_3$ films that can be utilized to develop vertical devices for high-power electronics applications.
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