立方silicon carbide升华生长过程中量子功能缺陷的引入和控制
Incorporation and control of defects with quantum functionality during sublimation growth of cubic silicon carbide
摘要：
基于超导体的量子计算的主要缺点是工作温度需要液氦冷却。克服量子技术这一障碍的一种有希望的方法是基于半导体中的深能级缺陷，金刚石中的氮空位（NV）中心是最突出的例子。不幸的是，足够质量的金刚石是稀缺的，这促使人们努力在碳化硅（SiC）中找到类似的缺陷。到目前为止，许多报道集中在辐照3C-SiC和生长材料中的点缺陷的研究。然而，所调查的缺陷或多或少是两者巧合的产物。虽然在辐照材料中，故意产生特定缺陷是相当具有挑战性的，但在采购材料中，缺陷实际上更多是生长和工艺条件的无意副产品。本工作提出了一种新的途径：通过外延升华生长的方法在3C-SiC中引入和控制深能级缺陷。在近红外中观察到的缺陷在175 K/200 K范围内显示出明亮的发光，并且在高达300 K的温度下仍然是可激发的。这可以使工作温度高于低温极限。所有检测到的缺陷的联合起源被分配到碳空位。
英文摘要：
Superconductor based quantum computing has the major drawback of working temperatures which require liquid helium for cooling. A promising approach to overcome this obstacle for quantum technologies is based on deep level defects in semiconductors, with the nitrogen vacancy (NV) center in diamond being the most prominent example. Unfortunately, diamond in sufficient quality is scarce, which motivated efforts to find similar defects in silicon carbide (SiC). So far, many reports focus on investigations of point defects in irradiated 3C-SiC and as grown material. However, the investigated defects are more or less a product of coincidence for both. While in irradiated material the intentional generation of specific defects is rather challenging, in as purchased material the defects are actually more an unintentional by product of growth and process conditions. This work proposes a new route: the incorporation and control of deep level defects in 3C-SiC by epitaxial sublimation growth. The observed defects in the near infrared show bright luminescence in the 175 K/200 K regime and remain excitable up to 300 K. This could enable working temperatures above the cryogenic limit. The joint origin of all detected defects is assigned to the carbon vacancy.
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