WS2螺位错处的带隙闭合
Bandgap closing at the screw dislocations of WS2 spirals
摘要：
范德瓦尔斯（vdW）层状过渡金属二硫属化合物（TMDC）材料是一类具有新颖光学和电学性质的量子材料。特别是，当应用介电屏蔽或晶界工程时，已经观察到对纳米电子技术有吸引力的带隙可调谐性高达1.1 eV。在这里，我们提出的带隙关闭的中心的螺旋位错驱动的WS 2螺旋金字塔的扫描隧道光谱，这是通过第一性原理计算验证的实验观察。观察到的巨禁带调制归因于W-S断裂引起的悬挂键的存在和位错核心局部应力的增强。实现这种金属状态和随之而来的垂直导电沟道提出了一种基于新兴半导体TMDC的3D互连VDW异质结构器件的途径。
英文摘要：
Van der Waals (vdW) layered transition metal dichalcogenides (TMDCs) materials are emerging as one class of quantum materials holding novel optical and electronic properties. In particular, the bandgap tunability attractive for nanoelectronics technology have been observed up to 1.1 eV when applying dielectric screening or grain boundary engineering. Here we present the experimental observation of bandgap closing at the center of the screw dislocation-driven WS2 spiral pyramid by means of scanning tunneling spectroscopy, which is validated by first-principle calculations. The observed giant bandgap modulation is attributed to the presence of dangling bonds induced by the W-S broken and the enhanced localized stress in the core of the dislocation. Achieving this metallic state and the consequent vertical conducting channel presents a pathway to 3D-interconnected vdW heterostructure devices based on emergent semiconducting TMDCs.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
