用π-扩展的磷鎓芴电解质作为空穴阻挡层将Percent太阳能电池的开路电压提高到120 mV
Enhancing the Open-Circuit Voltage of Perovskite Solar Cells by up to 120 mV using π-Extended Phosphoniumfluorene Electrolytes as Hole Blocking Layers
摘要：
在ITO/PEDOT：PSS/MAPbI 3/PCBM/HBL/Ag结构的倒置结构平面钙钛矿太阳能电池（PVSC）中引入了4种π-扩展的磷芴电解质（π-PFE）作为空穴阻挡层（HBL）。π-PFE的深位最高占据分子轨道（HOMO）能级有效地阻挡空穴，减少接触复合。我们证明了π-PFEs的掺入在PCBM/Ag界面处引入了偶极矩，导致器件的内建电势显著增强。与常用的浴铜灵HBL相比，这种增强导致器件的开路电压增加高达120 mV。实验和数值模拟结果都证实了这一点。我们的工作表明，通过小分子电解质的传输层/接触界面的界面工程是抑制钙钛矿器件中的非辐射复合和补偿空穴传输层/钙钛矿界面处的非理想能量对准的有希望的途径。
英文摘要：
Four π-extended phosphoniumfluorene electrolytes (π-PFEs) are introduced as hole-blocking layers (HBL) in inverted architecture planar perovskite solar cells (PVSCs) with the structure of ITO/PEDOT:PSS/MAPbI3/PCBM/HBL/Ag. The deep-lying highest occupied molecular orbital (HOMO) energy level of the π-PFEs effectively blocks holes, decreasing contact recombination. We demonstrate that the incorporation of π-PFEs introduces a dipole moment at the PCBM/Ag interface, resulting in a significant enhancement of the built-in potential of the device. This enhancement results in an increase in the open-circuit voltage of the device by up to 120 mV, when compared to the commonly used bathocuproine HBL. The results are confirmed both experimentally and by numerical simulation. Our work demonstrates that interfacial engineering of the transport layer/contact interface by small molecule electrolytes is a promising route to suppress non-radiative recombination in perovskite devices and compensate for a non-ideal energetic alignment at the hole-transport layer/perovskite interface.
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