MoS2的缺陷调节氧化刻蚀
Defect-Moderated Oxidative Etching of MoS2
摘要：
我们报道了一种简单的双层和单层MoS $_2$的选择性刻蚀技术。在这项工作中，选定的区域的MoS $_2$被激活的氧吸附和反应的应用低剂量的He $^+$在30千电子伏的气体离子显微镜。拉曼光谱，光学显微镜和扫描电子显微镜被用来表征蚀刻的功能和剩余的材料。已经发现，通过使用预处理来引入缺陷，MoS $_2$可以通过在空气中加热而被非常有效地蚀刻并且具有高区域特异性。
英文摘要：
We report a simple technique for the selective etching of bilayer and monolayer MoS$_2$. In this work, chosen regions of MoS$_2$ were activated for oxygen adsorption and reaction by the application of low doses of He$^+$ at 30 keV in a gas ion microscope. Raman spectroscopy, optical microscopy and scanning electron microscopy were used to characterize both the etched features and the remaining material. It has been found that by using a pre-treatment to introduce defects, MoS$_2$ can be etched very efficiently and with high region specificity by heating in air.
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