在SiO $_2$ /Si上生长大面积掺锰MoSe $_2$少层薄膜的范德华固相外延
Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe$_2$ few-layers on SiO$_2$/Si
摘要：
大面积生长连续的过渡金属二硫属化物（TMDC）层是将其优异的电子和光学性能转化为实用器件的先决条件。如今，它仍然是一个悬而未决的问题。TMDC层的电和磁掺杂以开发用于自旋电子学应用的基本器件，例如pn结或稀磁半导体，也是重要的研究领域。在这里，我们已经开发了两种不同的技术来生长MoSe $_2$单层和多层的SiO $_2$ /Si衬底上的大面积。首先，我们共同沉积Mo和Se原子上的SiO $_2$ /Si的分子束外延在范德华制度获得连续的MoSe $_2$单层超过1厘米的$^2$。为了生长MoSe $_2$多层膜，我们然后使用范德华固相外延，其包括在用作范德华生长模板的共沉积的MoSe $_2$单层的顶部上沉积非晶Se/Mo双层。通过退火，我们得到了连续的MoSe $_2$多层膜超过1厘米的$^2$。此外，通过在叠层中插入Mn薄层，我们可以证明在MoSe $_2$双层中掺入高达10 \%的Mn。
英文摘要：
Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric and magnetic doping of TMDC layers to develop basic devices such as p-n junctions or diluted magnetic semiconductors for spintronic applications are also an important field of investigation. Here, we have developed two different techniques to grow MoSe$_2$ mono- and multi-layers on SiO$_2$/Si substrates over large areas. First, we co-deposited Mo and Se atoms on SiO$_2$/Si by molecular beam epitaxy in the van der Waals regime to obtain continuous MoSe$_2$ monolayers over 1 cm$^2$. To grow MoSe$_2$ multilayers, we then used the van der Waals solid phase epitaxy which consists in depositing an amorphous Se/Mo bilayer on top of a co-deposited MoSe$_2$ monolayer which serves as a van der Waals growth template. By annealing, we obtained continuous MoSe$_2$ multilayers over 1 cm$^2$. Moreover, by inserting a thin layer of Mn in the stack, we could demonstrate the incorporation of up to 10 \% of Mn in MoSe$_2$ bilayers.
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