基于忆阻器仿真器的非易失性存储单元
Nonvolatile Memory Cell Based on Memristor Emulator
摘要：
忆阻器是基本电路元件之一，理论上可以实现无限状态，在非易失性存储器和存储技术中具有广阔的应用前景。信息可以在这些状态下独立存储，并在需要时检索。本文提出了一种基于忆阻器仿真器的非易失性存储单元。该电路能够执行读和写操作。在这种基于忆阻器的存储单元中，单极性脉冲用于写入，双极性脉冲用于读取。与其他早期设计不同，该电路不需要外部读/写使能开关来在读和写操作之间切换;该切换是通过在写周期完成后给出的零平均双极性读脉冲来实现的。在我们提出的基于忆阻器的存储单元中，可以读取单个位，并且可以写入从0到5伏的任何电压。对基于忆阻器仿真器的读写电路进行了数学分析和仿真验证。
英文摘要：
Memristor, one of the fundamental circuit elements, has promising applications in non-volatile memory and storage technology as it can theoretically achieve infinite states. Information can be stored independently in these states and retrieved whenever required. In this paper, we have proposed a non volatile memory cell based on memristor emulator. The circuit is able to perform read and write operations. In this memristor based memroy cell, unipolar pulse is used for writing and bipolar pulse is used for reading. Unlike other earlier designs, the circuit does not need external read/write enable switches to switch between read and write operations; the switching is achieved by the zero average bipolar read pulse given after the completion of write cycle. In our proposed memristor based memory cell, single bit can be read and any voltages from 0 to 5 volts can be written. Mathematical analysis and the simulation results of memristor emulator based read write circuit have been presented to confirm its operation.
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