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arXiv 1905.04025cond-mat.str-elcond-mat.mtrl-scicond-mat.stat-mech
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扭曲双层锗硒化物中的一维平带

One-dimensional flat bands in twisted bilayer germanium selenide

D. M. Kennes, L. Xian, M. Claassen, A. Rubio

摘要:

在以小角度的相对扭转堆叠的少层材料的制造和表征方面的实验进展最近显示出平坦能带的出现。因此,电子相互作用变得相关,为强相关二维系统的物理学提供了进展。在这里,我们证明了通过结合大规模从头计算模拟与数值精确的强相关方法,一个有效的一维系统出现在堆叠两个扭曲的片材GeSe,在显着的对比,到目前为止研究的所有莫尔系统。这不仅允许研究在一个维度上的激励的必然集体性质,而且还可以作为一个有前途的平台,通过改变扭转角,在受控设置中仔细检查从二维到一维的交叉,这提供了一个有趣的理论基准。因此,我们建立扭曲双层锗硒作为一个有趣的侵入到强相关物理的低维系统。

英文摘要:

Experimental advances in the fabrication and characterization of few-layer materials stacked at a relative twist of small angle have recently shown the emergence of flat energy bands. As a consequence electron interactions become relevant, providing inroads into the physics of strongly correlated two-dimensional systems. Here, we demonstrate by combining large scale ab initio simulations with numerically exact strong correlation approaches that an effective one-dimensional system emerges upon stacking two twisted sheets of GeSe, in marked contrast to all Moiré systems studied so far. This not only allows to study the necessarily collective nature of excitations in one dimension, but can also serve as a promising platform to scrutinize the crossover from two to one dimension in a controlled setup by varying the twist angle, which provides an intriguing benchmark with respect to theory. We thus establish twisted bilayer GeSe as an intriguing inroad into the strongly correlated physics of low-dimensional systems.

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