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arXiv 1904.07585cond-mat.supr-con
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基于$YBa_2Cu_3O_{7-δ}$薄膜的直流偏置共面波导的微波猝灭

Microwave Quenching in DC-biased Coplanar Waveguide Based on $YBa_2Cu_3O_{7-δ}$ Thin Film

Nickolay T. Cherpak, Alexey I. Gubin, Alexander A. Lavrinovich, Svetlana A. Vitusevich

摘要:

在本文中,我们报告的结果特征的发现在高温超导共面波导(CPW)的微波损耗(淬火)在一定值的输入功率$P_{in}$和直流(DC)$I_{dc}$的强烈变化的影响。两个波导进行了研究:CPW-150和CPW-75,制造的外延150 nm和75 nm的YBCO薄膜。当施加固定电平的输入X波段脉冲MW信号$P_{in}$时,测量了CPW的插入损耗$IL = 10 lg (P_{out} / P_{in})$与工作温度和偏置DC电流$I_{dc}$的关系。这里,$P_{out}$是在CPW输出端测得的功率。脉冲持续时间$τ_i$为5 $μs$,脉冲重复周期T = 40 $μs$。实验表明,CPW-150和CPW-75中对应于$P_{in}$依赖性猝灭现象的$I^*= I_{dc}$具体值存在明显差异。在弱输入信号的情况下,预期CPW的行为的差异,即,对于较薄的膜,在较低的电流下发生淬火。对于$P_{in}>1W$,情况相反,即,CPW-150的猝灭发生在较低的$I^*$下。这是由CPW-150的较强微波加热解释的。

英文摘要:

In this paper, we report on the results of features in the discovered effect of a strong change in the microwave losses (quenching) in HTS-based coplanar waveguide (CPW) at certain values of the input power $P_{in}$ and direct current (DC) $I_{dc}$. Two waveguides were studied: CPW-150 and CPW-75, fabricated of epitaxial 150 nm and 75 nm YBCO films. The insertion loss of CPW, $IL = 10 lg (P_{out} / P_{in})$, was measured versus both the operating temperature and the bias DC current $I_{dc}$ when a fixed level of the input X-band pulsed MW signal $P_{in}$ was applied. Here $P_{out}$ is the power measured at the CPW output. A pulse duration $τ_i$ was 5 $μs$ with pulse repetition period T = 40 $μs$. Experiments showed a noticeable difference in specific values of $I^*= I_{dc}$ corresponding to the $P_{in}$ dependent quenching phenomenon in CPW-150 and CPW-75. With a weak input signal the difference in behavior of CPWs is anticipated, i.e., quenching occurs at a lower current for thinner film. For $P_{in}>1W$ the situation is opposite, i.e., quenching for CPW-150 takes place at a lower $I^*$. This is explained by stronger microwave heating of CPW-150.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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