可移动量子点探测硅表面的静电场
Electrostatic Landscape of a H-Silicon Surface Probed by a Moveable Quantum Dot
摘要：
随着纳米电子达到原子大小器件的极限，研究局部环境中的不规则性如何影响器件功能变得至关重要。在这里，我们表征的影响带电原子物种的半导体表面的静电势在亚纳米尺度。利用非接触式原子力显微镜，利用二维接触电势差图来显示氢封端的高掺杂硅（100）表面上空间变化的静电势.三种类型的带电物种，一个在表面上，两个在散装，进行检查。一个电场敏感的光谱特征的一个单一的探针原子报告附近的带电物种。近地表物种之一的身份一直不确定。该物种，被怀疑是硼或可能是一个带负电荷的供体物种，我们建议是一个字符更符合带负电荷的间隙氢或氢空位复合物。
英文摘要：
With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here, we characterize the influence of charged atomic species on the electrostatic potential of a semiconductor surface at the sub-nanometer scale. Using non-contact atomic force microscopy, two-dimensional maps of the contact potential difference are used to show the spatially varying electrostatic potential on the (100) surface of hydrogen-terminated highly-doped silicon. Three types of charged species, one on the surface and two within the bulk, are examined. An electric field sensitive spectroscopic signature of a single probe atom reports on nearby charged species. The identity of one of the near-surface species has been uncertain. That species, suspected of being boron or perhaps a negatively charged donor species, we suggest is of a character more consistent with either a negatively charged interstitial hydrogen or a hydrogen vacancy complex.
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