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arXiv 1902.03462cond-mat.str-el
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Au(111)表面二维GdAu2层的自织构电子性质:离面原子位移的作用

Self- texturizing electronic-properties in a 2-dimensional GdAu2 layer on Au(111): the role of out-of-plane atomic displacement

Alexander Correa, Matteo Farnesi Camellone, Ana Barragan, Abhishek Kumar, Cinzia Cepek, Maddalena Pedio, Stefano Fabris, Lucia Vitali

摘要:

在这里,我们表明,表面支撑的2维(2D)层结构的电子特性可以在纳米尺度上自纹理化。局部电子性质是由结构弛豫过程通过可变的吸附堆积配置。我们证明了由晶格失配和GdAu_2/Au(111)界面处的层/衬底耦合引起的空间调制的层屈曲足以在其他金属层中在费米能级处局部打开约0.5eV的能隙。此外,Gd原子的这种面外位移使杂化Gd-d态的特征图案化,并使Gd 4f多重态的质心与晶格畸变成比例地移动。这些发现表明了2D层的电子性质与其平面性之间的密切相关性。我们证明,所得到的模板显示不同的化学反应,可能会发现重要的应用。

英文摘要:

Here, we show that the electronic properties of a surface-supported 2-dimensional (2D) layer structure can be self-texturized at the nanoscale. The local electronic properties are determined by structural relaxation processes through variable adsorption stacking configurations. We demonstrate that the spatially modulated layer-buckling, which arises from the lattice mismatch and the layer/substrate coupling at the GdAu2/Au(111) interface, is sufficient to locally open an energy gap of ~0.5eV at the Fermi level in an otherwise metallic layer. Additionally, this out-of-plane displacement of the Gd atoms patterns the character of the hybridized Gd-d states and shifts the center of mass of the Gd 4f multiplet proportionally to the lattice distortion. These findings demonstrate the close correlation between the electronic properties of the 2D-layer and its planarity. We demonstrate that the resulting template shows different chemical reactivity which may find important applications.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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