具有TMAH处理的基于AlGaN / GaN超晶格的p沟道场效应晶体管（pFET）
AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment
摘要：
为了实现III族氮化物材料系统提供的全部优点，基于p沟道III族氮化物的器件的演示是有价值的。作者报道了第一个基于AlGaN/GAN超晶格（SL）的p型场效应晶体管（pFET），使用MOCVD生长。镁用作p型掺杂剂。当Mg掺杂量为1.5e19cm^-3时，通过传输线测量（TLM）测得薄层电阻为11.6 kΩ/sq，接触电阻为14.9Ω.mm。使用室温霍尔效应测量测量，在7-10 cm 2/Vs范围内的迁移率和在1 e 13 - 6 e 13 cm-2范围内的总薄片电荷密度。在没有经过四甲基氢氧化铵（TMAH）处理的情况下，所制备的pFET的最大漏源电流（IDS）为3 mA/mm，导通电阻（RON）为3.48 kΩ·mm，并且没有完全关断。采用TMAH处理工艺制备的P型（Al，Ga）N晶体管，最大IDS为4.5mA/mm，RON为2.2kΩ·mm，电流调制为5个数量级，是目前P型（Al，Ga）N晶体管中最高的。
英文摘要：
To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable. Authors report the first p-type field effect transistor (pFET) based on an AlGaN/GaN superlattice (SL), grown using MOCVD. Magnesium was used as the p-type dopant. A sheet resistance of 11.6 kΩ/sq, and a contact resistance of 14.9Ω.mm was determined using transmission line measurements (TLM) for a Mg doping of 1.5e19cm^-3 of Mg. Mobilities in the range of 7-10 cm\^2/Vs and a total sheet charge density in the range of 1e13-6e13 cm-2 were measured using room temperature Hall effect measurements. Without Tetramethylammonium hydroxide (TMAH) treatment, the fabricated pFETs had a maximum drain-source current (IDS) of 3mA/mm and an On-Resistance (RON) of 3.48 kΩ.mm, and did not turn-off completely. With TMAH treatment during fabrication, a maximum IDS of 4.5mA/mm, RON of 2.2kΩ.mm, and five orders of current modulation was demonstrated, which is the highest achieved for a p-type transistor based on (Al,Ga)N.
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