热退火Ge（001）衬底上Si异质外延的岛化、生长模式和有序化
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing
摘要：
Si/Ge异质外延点在拉伸应变下生长在纳米结构Ge衬底上，所述纳米结构Ge衬底通过高温闪速加热利用Ge（001）表面接近于表面熔化的开始的自发刻面而产生。一个非常多样化的生长模式，获得依赖于特定的原子结构和附近的表面域与不同的邻位晶体取向的台阶密度。在Ge（001）衬底的高度错切区域上，与平坦Ge（001）表面报道的11 ML相比，岛化的临界厚度降低到约5 ML，而在未重构（1x 1）域上，生长是Volmer-Weber驱动的。考虑到不同的相对贡献的步骤和表面能上取向不良的基板上提出的解释。此外，我们表明，自下而上的图案的基板自然形成的热退火确定的点的网站的空间相关性。
英文摘要：
Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(001) surface close to the onset of surface melting. A very diverse growth mode is obtained depending on the specific atomic structure and step density of nearby surface domains with different vicinal crystallographic orientations. On highly-miscut areas of the Ge(001) substrate, the critical thickness for islanding is lowered to about 5 ML, in contrast to the 11 ML reported for the flat Ge(001) surface, while on unreconstructed (1x1) domains the growth is Volmer-Weber driven. An explanation is proposed considering the diverse relative contributions of step and surface energies on misoriented substrates. In addition, we show that the bottom-up pattern of the substrate naturally formed by thermal annealing determines a spatial correlation for the dot sites.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
