用于纳米机电（NEM）致动器应用的纳米晶石墨烯的堆叠
Stacking of nanocrystalline graphene for Nano-Electro-Mechanical (NEM) actuator applications
摘要：
石墨烯纳米机电开关由于其良好的开关性能，如低吸合电压和低接触电阻，是很有前途的组件。用适当的对电极进行大规模制造仍然具有挑战性。在这项工作中，我们报告的堆叠纳米晶石墨烯（NCG）与70纳米的介电分离层。掩埋的NCG层通过通孔的形成而接触并且充当致动电极。金属化后，顶部7.5 nm的薄NCG层被图案化以形成双钳位梁，并且通过氢氟酸蚀刻释放该结构。通过在顶部和掩埋NCG层之间施加电压，观察到低于1.5V的阶梯状电流增加，这是由可移动梁与掩埋NCG的接触引起的。由于薄的牺牲层和高的梁长度，没有观察到拔出，导致低的机械回复力。我们讨论了可能的应用NCG堆叠的方法来实现纳米机电（NEM）接触开关和先进的逻辑组件，如与逻辑。
英文摘要：
Graphene nano-electro-mechanical switches are promising components due to their excellent switching performance such as low pull-in voltage and low contact resistance. Mass fabrication with an appropriate counter electrode remains challenging. In this work, we report the stacking of nanocrystalline graphene (NCG) with a 70-nm dielectric separation layer. The buried NCG layer is contacted through the formation of vias and acts as actuation electrode. After metallization, the top 7.5-nm thin NCG layer is patterned to form double-clamped beams, and the structure is released by hydrofluoric acid etching. By applying a voltage between the top and buried NCG layer, a step-like current increase is observed below 1.5 V, caused by the contact of the movable beam with the buried NCG. No pull-out is observed due to the thin sacrificial layer and high beam length, resulting in low mechanical restoring force. We discuss the possible applications of the NCG stacking approach to realize Nano-Electro-Mechanical (NEM) contact switches and advanced logical components such as a AND logic.
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