WTe $_{2}$的唯象磁弹性电阻：电子和量子输运性质的应变工程
Phenomenal magneto-elastoresistance of WTe$_{2}$: strain engineering of electronic and quantum transport properties
摘要：
弹性电阻描述了材料在应变时电阻的相对变化。它有两个主要的贡献：应变引起的几何和电子的变化。如果几何因素占主导地位，如在普通金属如铜中，则弹性电阻为正且相当小，即通常为1阶。然而，在少数材料中，电子结构的变化占主导地位，这会产生更大甚至是负值，例如Bi的（-11）。在这里，我们报告说，过渡金属二硫属化物（TMDC）WTe $_{2}$是第二组的成员，表现出大的和非单调的弹性电阻，约（-20）接近100 K，并在低温下改变符号。我们发现，施加的磁场对WTe $_{2}$中的弹性电阻具有显著的影响：在低温下的量子机制中，它导致弹性电阻的量子振荡，其范围在（-80）到120之间，在仅半特斯拉的场范围内。在中温的半经典区，我们发现在磁场中，弹性电阻迅速增加并改变符号。我们提供了一个半定量的理解，我们的实验结果使用第一原理和分析低能模型计算的组合。了解TMDC在单轴应变下的体特性是实现二维TMDC应变工程的重要基础。
英文摘要：
Elastoresistance describes the relative change of a material's resistance when strained. It has two major contributions: strain induced geometric and electronic changes. If the geometric factor dominates, like in ordinary metals such as copper, the elastoresistance is positive and rather small, i.e. typically of order 1. In a few materials, however, changes in electronic structure dominate, which gives rise to larger and even negative values, such as (-11) for Bi. Here, we report that the transition metal dichalcogenide (TMDC) WTe$_{2}$ is a member of the second group, exhibiting a large and non-monotonic elastoresistance that is about (-20) near 100 K and changes sign at low temperatures. We discover that an applied magnetic field has a dramatic effect on the elastoresistance in WTe$_{2}$: in the quantum regime at low temperatures, it leads to quantum oscillations of the elastoresistance, that ranges between (-80) to 120 within a field range of only half a Tesla. In the semiclassical regime at intermediate temperatures, we find that the elastoresistance rapidly increases and changes sign in a magnetic field. We provide a semi-quantitative understanding of our experimental results using a combination of first-principle and analytical low-energy model calculations. Understanding bulk properties of TMDCs under uniaxial strain is an important stepping stone toward strain engineering of 2D TMDCs.
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