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arXiv 1901.02876cond-mat.str-el
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Cr $_2$ X $_2$ Te $_6$(X = Si和Ge)的各向异性磁熵变

Anisotropic magnetic entropy change in Cr$_2$X$_2$Te$_6$ (X = Si and Ge)

Yu Liu, C. Petrovic

摘要:

本征二维(2D)铁磁半导体是自旋电子学应用中的一类重要材料。Cr $_2$ X $_2$ Te $_6$(X = Si和Ge)半导体显示出二维类伊辛铁磁性,这种磁性在少层器件中得以保留。与Cr $_2$ Si $_2$ Te $_6$ $-ΔS_M^{max} \sim$ 5.05 J kg $^{-1}$ K $^{-1}$的铁磁转变周围的临界性质相关的最大磁熵变远大于$-ΔS_M^{max} \sim$ 2.64 J kg $^{-1}$ K $^{-1}$对于Cr $_2$ Ge $_2$ Te $_6$,面外场变化为5 T。重新缩放的$-ΔS_M(T,H)$曲线折叠成与两种材料的温度和场无关的通用曲线。这表明了类似的临界行为和2D伊辛磁性,证实了可以在Cr $_2$ X $_2$ Te $_6$的几层中保持长程铁磁性的磁晶各向异性。

英文摘要:

Intrinsic, two-dimensional (2D) ferromagnetic semiconductors are an important class of materials for spintronics applications. Cr$_2$X$_2$Te$_6$ (X = Si and Ge) semiconductors show 2D Ising-like ferromagnetism, which is preserved in few-layer devices. The maximum magnetic entropy change associated with the critical properties around the ferromagnetic transition for Cr$_2$Si$_2$Te$_6$ $-ΔS_M^{max} \sim$ 5.05 J kg$^{-1}$ K$^{-1}$ is much larger than $-ΔS_M^{max} \sim$ 2.64 J kg$^{-1}$ K$^{-1}$ for Cr$_2$Ge$_2$Te$_6$ with an out-of-plane field change of 5 T. The rescaled $-ΔS_M(T,H)$ curves collapse onto a universal curve independent of temperature and field for both materials. This indicates similar critical behavior and 2D Ising magnetism, confirming the magnetocrystalline anisotropy that could preserve the long-range ferromagnetism in few-layers of Cr$_2$X$_2$Te$_6$.

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