arXivDaily arXiv每日学术速递 周一至周五更新
arXiv周末暂无论文更新,休息一下吧,周末愉快~~
arXiv 1810.03356cond-mat.mtrl-sci
收藏

多孔介导的高性能热电材料

Porosity-mediated High-performance Thermoelectric Materials

Xiaoxi Chen, Siyi Chang, Jin Chen, Pengfei Nan, Hao Wang, Shan Li, Xiyang Li, Xu Chen, Qiulin Liu, Xiaoshan Zhu, Binghui Ge, Wei Cai, Jiehe Sui, Shuqi Zheng, Fa… 展开作者

Xiaoxi Chen, Siyi Chang, Jin Chen, Pengfei Nan, Hao Wang, Shan Li, Xiyang Li, Xu Chen, Qiulin Liu, Xiaoshan Zhu, Binghui Ge, Wei Cai, Jiehe Sui, Shuqi Zheng, Fangwei Wang, Xiaolong Chen, Huaizhou Zhao

摘要:

孔隙率是否能有效地提高热电性能仍是一个悬而未决的问题。在本文中,我们报告了热电性能可以通过在n型Mg3.225Mn0.025Sb1.5Bi0.49Te0.01中产生孔隙来显著增强,在323 K下ZT为~0.9,在723 K下为~1.6,使得平均ZT高得多以获得更好的性能。考虑到这样的ZT值与n型Bi 2 Te 3在该温度下的最佳ZT相当,在室温下的大的改善是显著的。这种增强主要来自于提高的电迁移率和多尺度声子散射,特别是来自于多孔结构中分散良好的铋纳米沉淀。我们进一步将这种方法扩展到其他热电材料,如半Heuslers Nb0.56V0.24Ti0.2FeSb和Hf0.25Zr0.75NiSn0.99Sb0.01和Bi0.5Sb1.5Te3,显示出类似的改进,进一步推进热电材料的应用。

英文摘要:

Whether porosity can effectively improve thermoelectric performance is still an open question. Herein we report that thermoelectric performance can be significantly enhanced by creating porosity in n-type Mg3.225Mn0.025Sb1.5Bi0.49Te0.01, with a ZT of ~0.9 at 323 K and ~1.6 at 723 K, making the average ZT much higher for better performance. The large improvement at room temperature is significant considering that such a ZT value is comparable to the best ZT at this temperature in n-type Bi2Te3. The enhancement was mainly from the improved electrical mobility and multi-scale phonon scattering, particularly from the well-dispersed bismuth nano-precipitates in the porous structure. We further extend this approach to other thermoelectric materials such as half-Heuslers Nb0.56V0.24Ti0.2FeSb and Hf0.25Zr0.75NiSn0.99Sb0.01 and Bi0.5Sb1.5Te3 showing similar improvements, further advancing thermoelectric materials for applications.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑