用于剂量测定应用的先进闪存芯片
State-of-the-Art Flash Chips for Dosimetry Applications
摘要：
在本文中，我们表明，国家的最先进的商业现成的闪存芯片技术（20纳米技术节点与多级细胞）是相当敏感的电离辐射。我们发现，在这些闪存芯片的故障位计数开始增加单调与伽马或X射线剂量在100拉德（二氧化硅）。在X射线照射的器件中观察到明显更多的故障位，这很可能是由于高Z后端材料引起的剂量增强效应。这些结果显示出剂量学应用的前景。
英文摘要：
In this paper we show that state-of-the-art commercial off-the-shelf Flash memory chip technology (20 nm technology node with multi-level cells) is quite sensitive to ionizing radiation. We find that the fail-bit count in these Flash chips starts to increase monotonically with gamma or X-ray dose at 100 rad(SiO2). Significantly more fail bits are observed in X-ray irradiated devices, most likely due to dose enhancement effects due to high-Z back-end-of-line materials. These results show promise for dosimetry application.
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