高温紫外光探测器综述
High-temperature Ultraviolet Photodetectors: A Review
摘要：
宽带隙半导体材料是近十年来光电子领域最具吸引力的材料。它们的宽带隙和本征性质已经推进了可靠的光电探测器的发展，以选择性地探测短波长（即，紫外线（UV）在高温区域（高达300°C）。高温紫外线检测仪器开发的主要驱动力是对工业、汽车、航空航天和能源生产系统中有害环境和过程进行现场监测，这些系统会发出紫外线信号。在这篇评论中，总结的光学性能（在光电流暗电流比，响应率，量子效率和响应时间）和未冷却，高温特性的III族氮化物，SiC，和其他宽带隙半导体紫外光探测器。
英文摘要：
Wide bandgap semiconductors have become the most attractive materials in optoelectronics in the last decade. Their wide bandgap and intrinsic properties have advanced the development of reliable photodetectors to selectively detect short wavelengths (i.e., ultraviolet, UV) in high temperature regions (up to 300°C). The main driver for the development of high-temperature UV detection instrumentation is in-situ monitoring of hostile environments and processes found within industrial, automotive, aerospace, and energy production systems that emit UV signatures. In this review, a summary of the optical performance (in terms of photocurrent-to-dark current ratio, responsivity, quantum efficiency, and response time) and uncooled, high-temperature characterization of III-nitride, SiC, and other wide bandgap semiconductor UV photodetectors is presented.
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