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arXiv 1809.04513cond-mat.mtrl-sci
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稀土铁石榴石表面拓扑绝缘体Bi2Se3膜及其高质量界面

Topological insulator Bi2Se3 films on rare earth iron garnets and their high-quality interfaces

C. C. Chen, K. H. M. Chen, Y. T. Fanchiang, C. C. Tseng, S. R. Yang, C. N. Wu, M. X. Guo, C. K. Cheng, C. T. Wu, M. Hong, J. Kwo

摘要:

量子材料如拓扑绝缘体(TI)与磁绝缘体(MI)的集成对于自旋电子学和量子计算具有重要的技术意义。在这里,我们报告了良好的结晶度的c轴取向的外延TI薄膜Bi 2Se 3生长MI膜,稀土铁石榴石(ReIG),如铥铁石榴石(Tm 3Fe 5 O 12,TmIG)的分子束外延(MBE)与硒缓冲的低温(SBLT)生长技术。我们展示了条纹反射高能电子衍射图案开始从第一个五重层的Bi 2Se 3,表明高品质的界面TmIG和Bi 2Se 3之间,研究界面交换耦合效应的先决条件。Bi 2Se 3/TmIG双层膜中的反常霍尔效应和Bi 2Se 3引起的TmIG铁磁共振场的位移表明了强的界面交换相互作用。我们已经可重复地生长高品质的Bi 2Se 3/ReIG和接口使用这种新的TI生长方法,这可能适用于生长其他类型的范德华(vdW)异质结构。

英文摘要:

The integration of quantum materials like topological insulators (TIs) with magnetic insulators (MIs) has important technological implications for spintronics and quantum computing. Here we report excellent crystallinity of c-axis oriented epitaxial TI films Bi2Se3 grown on MI films, a rare earth iron garnet (ReIG), such as thulium iron garnet (Tm3Fe5O12, TmIG) by molecular beam epitaxy (MBE) with a Se-buffered low-temperature (SBLT) growth technique. We demonstrated a streaky reflection high-energy electron diffraction pattern starting from the very first quintuple layer of Bi2Se3, indicating the high-quality interface between TmIG and Bi2Se3, a prerequisite for studying interfacial exchange coupling effects. The strong interfacial exchange interaction was manifested by observations of anomalous Hall effect in the Bi2Se3/TmIG bilayer and a shift of ferromagnetic resonance field of TmIG induced by Bi2Se3. We have reproducibly grown high-quality Bi2Se3/ReIG and interfaces using this new TI growth method, which may be applied to grow other types of van der Waals (vdW) hetero-structures.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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