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arXiv 1808.09580physics.atom-ph
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场缺陷引起的自旋修饰弛豫和频移

Spin Dressed Relaxation and Frequency Shifts from Field Imperfections

C. M. Swank, E. K. Webb, X. Liu, B. W. Filippone

摘要:

临界修整,将两种自旋物质同时修整到相同的有效拉莫尔频率,是一种原则上可以提高对小频率偏移的灵敏度的技术。旋转修整的益处以及因此临界修整是以产生大的(相对于保持场$B_{0}$)均匀振荡场为代价来实现的。由于所产生的场的不可避免的缺陷,旋转修整的益处可能由于由修整场缺陷产生的额外弛豫和噪声而丧失。在此分析中,松弛和频率偏移的主题接近模拟和理论。分析预测是从一个新的准量子模型,其中包括梯度的持有领域$B_{0}=ω_{0}/γ$和敷料领域$B_{1}=ω_{1}/γ$,其中$B_{1}$是振荡频率$ω$。结果与蒙特卡罗模拟耦合5 $^{\text{th}}$阶龙格-库塔积分。这两种方法的比较,以及一组优化的参数,产生稳定的临界敷料的范围内的振荡频率$ω,$以及脉冲频率调制参数的最大灵敏度。

英文摘要:

Critical dressing, the simultaneous dressing of two spin species to the same effective Larmor frequency, is a technique that can, in principle, improve the sensitivity to small frequency shifts. The benefits of spin dressing and thus critical dressing are achieved at the expense of generating a large (relative to the holding field $B_{0}$,) homogeneous oscillating field. Due to inevitable imperfections of the fields generated, the benefits of spin dressing may be lost from the additional relaxation and noise generated by the dressing field imperfections. In this analysis the subject of relaxation and frequency shifts are approached with simulations and theory. Analytical predictions are made from a new quasi-quantum model that includes gradients in the holding field $B_{0}=ω_{0}/γ$ and dressing field $B_{1}=ω_{1}/γ$ where $B_{1}$ is oscillating at frequency $ω$. The results are compared with a Monte Carlo simulation coupled with a 5$^{\text{th}}$ order Runge-Kutta integrator. Comparisons of the two methods are presented as well as a set of optimized parameters that produce stable critical dressing at a range for oscillating frequencies $ω,$ as well as pulsed frequency modulation parameters for maximum sensitivity.

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