Dihedral-angle-corrected registry-dependent interlayer potential for multilayer graphene structures
Mingjian Wen, Stephen Carr, Shiang Fang, Efthimios Kaxiras, Ellad B. Tadmor
备注：
Reparameterized against a different training set. The new parameterization gives better predictions for interlayer binding energy and c-axis elastic modulus
The structural relaxation of multilayer graphene is essential in describing the interesting electronic properties induced by intentional misalignment of successive layers, including the recently reported superconductivity in twisted bilayer graphene. This is difficult to accomplish without an accurate interatomic potential. Here, we present a new, registry-dependent Kolmogorov-Crespi type interatomic potential to model interlayer interactions in multilayer graphene structures. It consists of two parts representing attractive interaction due to dispersion, and repulsive interaction due to anisotropic overlap of electronic orbitals. An important new feature is a dihedral-angle-dependent term that is added to the repulsive part in order to describe correctly several distinct stacking states that the original Kolmogorov-Crespi potential cannot distinguish. We refer to the new model as the Dihedral-angle-corrected Registry-dependent Interlayer Potential (DRIP). Computations for several test problems show that DRIP correctly reproduces the binding, sliding, and twisting energies and forces obtained from ab initio total-energy calculations based on density functional theory. We use the new potential to study the structural properties of a twisted graphene bilayer and the exfoliation of graphene from graphite. Our potential is available through the OpenKIM interatomic potential repository at https://openkim.org.
We perform molecular dynamics simulations to study the registry effect on the thermal conductivity of few-layer graphene. The interlayer interaction is described by either the Lennard-Jones potential or the registry-dependent potential. Our calculations show that the thermal conductivity in few-layer graphene from both potentials are close to each other, i.e the registry effect is essentially not important. It is because the thermal transport in few-layer graphene is mainly limited by the interlayer breathing mode, which is insensitive to the registry.
We provide a simple and intuitive explanation for the interlayer sliding energy landscape of metal dichalcogenides. Based on the recently introduced registry index (RI) concept, we define a purely geometrical parameter which quantifies the degree of interlayer commensurability in the layered phase of molybdenum disulphide (2HMoS2). A direct relation between the sliding energy landscape and the corresponding interlayer registry surface of 2H-MoS2 is discovered thus marking the registry index as a computationally efficient means for studying the tribology of complex nanoscale material interfaces…
The interlayer sliding energy landscape of hexagonal boron nitride (h-BN) is investigated via a van der Waals corrected density functional theory approach. It is found that the main role of the van der Waals forces is to "anchor" the layers at a fixed distance, whereas the electrostatic forces dictate the optimal stacking mode and the interlayer sliding energy. A nearly free-sliding path is identified, along which bandgap modulations of ~0.6 eV are obtained. We propose a simple geometrical model that quantifies the registry matching between the layers and captures the essence of the corrugated…
A detailed account of a recently developed method [Marom et al., Phys. Rev. Lett. 105, 046801 (2010)] to quantify the registry mismatch in layered materials is presented. The registry index, which was originally defined for planar hexagonal boron-nitride, is extended to treat graphitic systems and generalized to describe multi-layered nanotubes. It is shown that using simple geometric considerations it is possible to capture the complex physical features of interlayer sliding in layered materials. The intuitive nature of the presented model and the efficiency of the related computations sugges…
Thickness-Dependent Interlayer Coupling and Semiconductor-to-Semimetal Crossover in Arsenene Multilayers
The Anthony J. Leggett Institute for Condensed Matter Theory, Department of Physics, University of Illinois at Urbana-Champaign（伊利诺伊大学厄巴纳-香槟分校）；Materials Science and Technology Division, Oak Ridge National Laboratory（橡树岭国家实验室）；Research Center for Technology Commercialization, Korea Institute of Science and Technology Information (KISTI)（韩国科学技术信息研究院）
The interlayer energy of the twisting bilayer graphene is investigated by the molecular mechanics method using both the registry-dependent potential and the Lennard-Jones potential. Both potentials show that the interlayer energy is independent of the twisting angle $θ$, except in the two boundary regions $θ\approx 0$ or $60^{\circ}$, where the interlayer energy is proportional to the square of the twisting arc length. The calculation results are successfully interpreted by a single atom model. An important information from our findings is that, from the energy point of view, there is no prefe…
Chemical oxidation of multilayer graphene grown on silicon carbide yields films exhibiting reproducible characteristics, lateral uniformity, smoothness over large areas, and manageable chemical complexity, thereby opening opportunities to accelerate both fundamental understanding and technological applications of this form of graphene oxide films. Here, we investigate the vertical inter-layer structure of these ultra-thin oxide films. X-ray diffraction, atomic force microscopy, and IR experiments show that the multilayer films exhibit excellent inter-layer registry, little amount (<10%) of int…
Stacking two-dimensional (2D) van der Waals materials with different interlayer atomic registry in a heterobilayer causes the formation of a long-range periodic superlattice that may bestow the heterostructure with exotic properties such as new quantum fractal states [1-3] or superconductivity [4, 5]. Recent optical measurements of transition metal dichalcogenide (TMD) heterobilayers have revealed the presence of hybridized interlayer electron-hole pair excitations at energies defined by the superlattice potential [6-10]. The corresponding quasiparticle band structure, so-called minibands, hav…
The emergence of two-dimensional (2D) materials launched a fascinating frontier of flatland electronics. Most crystalline atomic layer materials are based on layered van der Waals materials with weak interlayer bonding, which naturally leads to thermodynamically stable monolayers. We report the synthesis of a 2D insulator comprised of a single atomic sheet of honeycomb structure BeO (h-BeO), although its bulk counterpart has a wurtzite structure. The h-BeO is grown by molecular beam epitaxy (MBE) on Ag(111) thin films that are conveniently grown on Si(111) wafers. Using scanning tunneling micr…
