MoS、MoO $_{2}$（MoSO）/ RGO异质结构的电学和光学性质
Electrical and optical properties of MoS$_{2}$,MoO$_{x=2,3}$(MoSO)/RGO heterostructure
摘要：
报道了电沉积在FTO衬底上的可控大面积MoSO/还原氧化石墨烯（RGO）异质结构的输运性质，并与MoSO/Gr的理论计算结果进行了比较。P型和n型MoSO异质结构的I-V特性在界面上表现出类似于MoS $_{2}$ /Gr异质结构的肖特基行为。理论计算表明，横向层的大小以及层数的电子性能的显着影响。在单层MoS $_{2}$ /Gr中，通过增加横向尺寸，能隙消失，费米能级向价带移动。在双层Gr结构上的双层MoS $_{2}$的情况下，费米能级再次向价带移动，但是带隙略高于单层结构。我们发现，实验获得的结果为n-型MoSO/RGO的结果是定性与理论计算的MoS $_{2}$ /Gr异质结。这些结果有助于理解和设计高质量、低成本的MoSO/RGO基电子、光电和储能器件或助催化剂。
英文摘要：
We report on transport properties of the controllable large area MoSO/Reduced graphene oxide(RGO) heterostructures electrodeposited on FTO substrates and its comparision with theoretical calculations on MoSo/Gr. I-V characteristics of the heterostructure made by P or n-type MoSO, exhibit Schottkey behavior in the interface similar to the MoS$_{2}$/Gr ones. Theoretical calculations show significant effects of lateral layer size as well as layer number in the electronic properties. In monolayer MoS$_{2}$/Gr by increasing the lateral size the energy gap disappears and the Fermi level shifts towards valence band. In the case of bilayer MoS$_{2}$ on bilayer Gr structure, the Fermi level shift is again towards valence band but, the gap is slightly higher than the monolayer structure. We found that the experimentally obtained results for n-type MoSO/RGO results are qualitatively in agreement with theoretical calculations of the MoS$_{2}$/Gr heterostructure. These results are beneficial to understand and design the high quality and low cost MoSO/RGO based electronic, optoelectronic and energy storage devices or cocatalysts.
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