立方半导体中亚太赫兹纵向声学声子Herring过程的击穿
Breakdown of Herring's processes in cubic semiconductors for sub-terahertz longitudinal acoustic phonons
摘要：
在目前的工作中，我们解释了GaAs中的纵向声学声子的衰减作为声子能量$ω$的函数在亚太赫兹域的异常行为。这些沿[100]方向的衰减在低温下在0.6和1 GHz之间显示出平台。我们发现我们中的一些人进行的测量与三阶非谐波过程的新\textit{ab initio}计算之间存在良好的一致性。高原的形成解释了不同的声子-声子散射过程之间的竞争，海岭的机制，在低频占主导地位，饱和和消失。高原被示出由声子的最终状态相空间在给定的温度下可用。我们预测，散射机制的变化也应该出现在硅的衰减约1.2-1.7太赫兹，并认为衰减平台是立方半导体的一般特征。
英文摘要：
In the present work we explain the anomalous behavior of the attenuation of the longitudinal acoustic phonon in GaAs as a function of the phonon energy $ω$ in the sub-THz domain. These attenuations along the [100] direction show a plateau between 0.6 and 1 GHz at low temperatures. We found an excellent agreement between measurements performed by some of us, and new \textit{ab initio} calculations of third-order anharmonic processes. The formation of the plateau is explained by the competition between different phonon-phonon scattering processes as Herring's mechanism, which dominates at low frequencies, saturates and disappears. The plateau is shown to be determined by the phononic final-state phase-space available at a given temperature. We predict that a change of scattering mechanism should also show up in the attenuation of silicon around 1.2-1.7 THz, and argue that the attenuation plateau is a general feature of cubic semiconductors.
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