石墨烯动态自旋注入的宽带和片上激发
Wideband and on-chip excitation for dynamical spin injection into graphene
摘要：
石墨烯是用于自旋输运的理想材料，因为即使在室温下也可以实现非常长的自旋弛豫时间和长度。然而，由于电导率失配问题，电自旋注入是具有挑战性的。由铁磁共振驱动的自旋泵是一种巧妙的方法来解决这个问题，因为它在没有电荷电流的情况下产生纯自旋电流。在这里，我们展示了微米级器件中单层石墨烯的自旋泵。宽带片上RF电流线用于使微米级坡莫合金（Ni $_{80}$ Fe $_{20}$）焊盘在磁场可调的谐振条件下发生铁磁谐振。在共振时，自旋电流被发射到石墨烯中，这通过附近的铂电极中的反自旋霍尔电压来检测。在2 GHz至8 GHz的频率范围内检测到低至几毫瓦的清晰自旋电流信号。这种紧凑的器件方案为更复杂的器件结构铺平了道路，并允许研究新材料。
英文摘要：
Graphene is an ideal material for spin transport as very long spin relaxation times and lengths can be achieved even at room temperature. However, electrical spin injection is challenging due to the conductivity mismatch problem. Spin pumping driven by ferromagnetic resonance is a neat way to circumvent this problem as it produces a pure spin current in the absence of a charge current. Here, we show spin pumping into single layer graphene in micron scale devices. A broadband on-chip RF current line is used to bring micron scale permalloy (Ni$_{80}$Fe$_{20}$) pads to ferromagnetic resonance with a magnetic field tunable resonance condition. At resonance, a spin current is emitted into graphene, which is detected by the inverse spin hall voltage in a close-by platinum electrode. Clear spin current signals are detected down to a power of a few milliwatts over a frequency range of 2 GHz to 8 GHz. This compact device scheme paves the way for more complex device structures and allows the investigation of novel materials.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
