用超顺磁性隧道结产生真随机位的电路级评估
Circuit-Level Evaluation of the Generation of Truly Random Bits with Superparamagnetic Tunnel Junctions
摘要：
许多新兴的替代计算模型需要大量的随机比特，但它们在低能量下的生成目前是一个挑战。超顺磁性隧道结是一种基于与自旋扭矩磁阻随机存取存储器相同技术的自旋电子器件，最近已被提出作为解决方案，因为该器件仅由于热噪声而在两个易于测量的电阻状态之间自然切换。读取结点的状态自然地提供随机位，而不需要写入操作。在这项工作中，我们评估的电路解决方案读取超顺磁性隧道结的状态。我们看到，该电路可能会对缩放的超顺磁性隧道结产生小的读取干扰效应，但这种效应在确保所生成的随机位的质量所需的白化过程中自然得到校正。这些结果表明，超顺磁性隧道结可以产生真正的随机位在20 fJ/位，包括开销，数量级低于基于CMOS的解决方案。
英文摘要：
Many emerging alternative models of computation require massive numbers of random bits, but their generation at low energy is currently a challenge. The superparamagnetic tunnel junction, a spintronic device based on the same technology as spin torque magnetoresistive random access memory has recently been proposed as a solution, as this device naturally switches between two easy to measure resistance states, due only to thermal noise. Reading the state of the junction naturally provides random bits, without the need of write operations. In this work, we evaluate a circuit solution for reading the state of superparamagnetic tunnel junction. We see that the circuit may induce a small read disturb effect for scaled superparamagnetic tunnel junctions, but this effect is naturally corrected in the whitening process needed to ensure the quality of the generated random bits. These results suggest that superparamagnetic tunnel junctions could generate truly random bits at 20 fJ/bit, including overheads, orders of magnitudes below CMOS-based solutions.
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