准一维结构在Bi/InAs（100）面上的强共振
Strong Resonances of Quasi 1D Structures at the Bi/InAs(100) Surface
摘要：
薄Bi膜是自旋电子学应用的感兴趣的候选者，这是由于大的自旋轨道分裂，结合在表面处的反转对称性的损失，导致非自旋简并的能带结构。近年来，基于Bi和Bi合金的拓扑绝缘体的应用也引起了广泛关注。本文介绍了Bi/InAs（100）界面的ARPES研究。Bi纳米线修饰的一个完整的Bi单层的形成的结果的表面退火后的沉积。我们发现，界面的建立确实会影响衬底的电子结构。作为弱相互作用的结果，铋态被置于InAs（100）的电子结构的间隙中。我们观察到一个很强的共振的Bi电子状态接近费米能级，其强度取决于光子的能量和光子的偏振。当垂直于纳米线测量时，这些状态几乎没有分散，证实了它们的一维性。
英文摘要：
Thin Bi films are interesting candidates for spintronic applications due to a large spin-orbit splitting that, combined with the loss of inversion symmetry at the surface, results in a band structure that is not spin-degenerate. In recent years, applications for topological insulators based on Bi and Bi alloys have as well attracted much attention. Here we present ARPES studies of Bi/InAs(100) interface. Bismuth deposition followed by annealing of the surface results in the formation of one full Bi monolayer decorated by Bi-nanolines. We found that the building up of the interface does affect the electronic structure of the substrate. As a consequence of weak interaction, bismuth states are placed in the gaps of the electronic structure of InAs(100). We observe a strong resonance of the Bi electronic states close to the Fermi level; its intensity depends on the photon energy and the photon polarization. These states show nearly no dispersion when measured perpendicular to the nanolines, confirming their one-dimensionality.
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