用超薄氧化铝钝化层提高溶液处理全无机量子点发光二极管效率800%以上
Over 800% Efficiency Enhancement of Solution-Processed All-Inorganic Quantum-Dot Light Emitting Diodes with an Ultrathin Alumina Passivating Layer
摘要：
在量子点发光二极管（QLED）中总是期望使用坚固的无机电荷传输材料，因为期望它们允许比有机对应物更高的稳定性和更低的成本。在这里，我们报告了一个全无机QLED具有优异的效率，通过修改的解决方案处理的NiO（s-NiO）表面的Al 2 O3钝化层。由羟基氧化镍（NiOOH）诱导的局部电场估计在离s-NiO层表面6 nm的距离处为~ 70 MV/cm。瞬态分辨光致发光（TRPL）和X射线光电子能谱学（XPS）测试表明，Al 2 O3钝化层能有效钝化s-NiO表面的NiOOH，从而抑制激子猝灭.结果，QLED的电流效率（外量子效率，EQE）实现了超过800%的效率提高，高达34.1cd/A（8.1%）。据我们所知，这是迄今为止性能最好的全无机QLED。
英文摘要：
The use of robust, inorganic charge-transport materials is always desired in quantum-dot light emitting diodes (QLEDs) because they are expected to allow higher stability and less cost than that of organic counterparts. Here we report an all-inorganic QLED with excellent efficiency by modifying the solution-processed NiO (s-NiO) surface with an ultrathin Al2O3 passivating layer. The localized electric field induced by nickel oxyhydroxide (NiOOH) is estimated to be ~ 70 MV/cm at a distance of 6 nm from the surface of s-NiO layer. Both transient resolution photoluminescence (TRPL) and X-Ray photoelectron spectroscopy (XPS) measurements demonstrate that the Al2O3 passivating layer can effectively passivate the NiOOH on the s-NiO surface, hence suppressing the exciton quenching. As a result, over 800% efficiency enhancement up to 34.1 cd/A (8.1%) for the current efficiency (external quantum efficiency, EQE) of the QLEDs is achieved. To the best of our knowledge, this is the best-performing all-inorganic QLED so far.
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