开放量子系统中GeBiTe的电导弛豫-慢热化
Conductance relaxation in GeBiTe - slow thermalization in an open quantum system
摘要：
本工作描述了GeBiTe薄膜的微结构和输运性质，重点是它们的非平衡行为。先前在相变化合物GeSbTe中研究的持续光电导（PPC）在该系统中也相当突出。在纯GeTe化合物中以及当GeTe与In或Mn合金化时观察到弱得多的PPC响应。由这些化合物制成的膜具有相同的晶体结构、相同的p型导电性、在介观尺度上延伸的相似的组成无序以及相似的马赛克形态。因此，Sb和Bi合金表现出的增强的PPC响应可能与它们的共同化学性质有关。PPC是可观察到的GeBiTe薄膜在整个范围内的方块电阻在这项工作中研究。由短暂暴露于红外照明产生的过量电导随时间以拉伸指数衰减（Kohlrausch定律）。另一方面，内在的电子玻璃效应，是观察到的薄膜的GeBiTe只有样品是强烈的本地化，就像它是与先前研究的七个电子玻璃所指出的。这些包括记忆下降，这是该现象的定义属性。GeBiTe中的记忆浸是迄今为止研究的锗碲化物合金中最宽的，这与该化合物的高载流子浓度一致。在PPC状态或电子玻璃状态中表现出的热化过程是缓慢的，但是从非平衡态的弛豫的时间规律是明显不同的。这两种现象的共存会产生一些非平凡的效应，特别是在PPC态中，记忆下降的可见性增强。讨论了这种效应与记忆效应大小对粒子间相互作用和猝灭无序之间的比值的依赖关系。
英文摘要：
This work describes the microstructure and transport properties of GeBiTe films with emphasis on their out-of-equilibrium behavior. Persistent-photoconductivity (PPC), previously studied in the phase-change compound GeSbTe is also quite prominent in this system. Much weaker PPC response is observed in the pure GeTe compound and when alloying GeTe with either In or Mn. Films made from these compounds share the same crystallographic structure, the same p-type conductivity, a similar compositional disorder extending over mesoscopic scales, and similar mosaic morphology. The enhanced PPC response exhibited by the Sb and Bi alloys may therefore be related to their common chemistry. PPC is observable in GeBiTe films at the entire range of sheet resistances studied in this work. The excess conductance produced by a brief exposure to infrared illumination decays with time as a stretched-exponential (Kohlrausch law). Intrinsic electron-glass effects on the other hand, are observable in thin films of GeBiTe only for samples that are strongly-localized just like it was noted with the seven electron-glasses previously studied. These include a memory-dip which is the defining attribute of the phenomenon. The memory-dip in GeBiTe is the widest among the germanium-telluride alloys studied to date consistent with the high carrier-concentration of this compound. The thermalization process exhibited in either, the PPC-state or in the electron-glass regime is sluggish but the temporal law of the relaxation from the out-of-equilibrium state is distinctly different. Coexistence of the two phenomena give rise to some non-trivial effects, in particular, the visibility of the memory-dip is enhanced in the PPC-state. The relation between this effect and the dependence of the memory-effect magnitude on the ratio between the interparticle-interaction and quench-disorder is discussed.
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