h-ErMnO $_3$中的频率相关极化开关
Frequency dependent polarisation switching in h-ErMnO$_3$
摘要：
我们报道了一个电场极化的几何驱动的非正常铁电h-ErMnO $_3$的研究。从详细的介电分析中，我们推导出单晶h-ErMnO $_3$表现出纯本征介电行为的温度和频率依赖范围，即，没有例如由表面阻挡层引起的外部的所谓Maxwell-Wagner极化。在此制度的铁电电滞回线作为频率，温度和施加的电场的函数进行测量，揭示了理论预测的饱和极化在5 - 6 $μ$ C/cm $^2$的顺序。特别强调的是放在频率依赖的极化开关，这是解释在畴壁运动类似适当的铁电体。通过电场控制畴壁使我们更接近它们在基于畴壁的电子学中的利用的重要一步。
英文摘要：
We report an electric-field poling study of the geometric-driven improper ferroelectric h-ErMnO$_3$. From a detailed dielectric analysis we deduce the temperature and frequency dependent range for which single-crystalline h-ErMnO$_3$ exhibits purely intrinsic dielectric behaviour, i.e., free from extrinsic so-called Maxwell-Wagner polarisations that arise, for example, from surface barrier layers. In this regime ferroelectric hysteresis loops as function of frequency, temperature and applied electric fields are measured revealing the theoretically predicted saturation polarisation in the order of 5 - 6 $μ$C/cm$^2$. Special emphasis is put on frequency-dependent polarisation switching, which is explained in terms of domain-wall movement similar to proper ferroelectrics. Controlling the domain walls via electric fields brings us an important step closer to their utilization in domain-wall-based electronics.
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