硅纳米线的CMOS兼容可控超掺杂
CMOS-compatible controlled hyperdoping of silicon nanowires
摘要：
超掺杂是指在半导体中故意引入超过平衡浓度的深能级掺杂剂。这导致掺杂剂能级加宽到价带和导带之间的中间带。[1，2]最近，已经证明用硫属元素或过渡金属超掺杂的体硅是用于硅基短波长红外光电探测器的合适的中间带材料。[3-5]中间带纳米线可能被用来代替大块材料，以克服Shockley-Queisser极限并提高太阳能电池的效率，[6-9]但超掺杂Si纳米线的基本科学问题需要实验验证。因此，开发一种在纳米尺度上获得受控超掺杂水平并伴随掺杂剂的电激活的方法对于理解这些问题至关重要。在这里，我们展示了一种CMOS兼容技术的基础上的非平衡处理的控制掺杂的Si在纳米级的掺杂剂浓度大于几个数量级的平衡固溶度。通过纳米级空间控制注入的掺杂剂，和自下而上的模板辅助固相再结晶的纳米线与使用毫秒闪光灯退火，我们形成Se-超掺杂的Si/SiO2芯/壳纳米线，具有室温下的子带隙光电光电响应时，配置为光电导体器件。
英文摘要：
Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and conduction bands.[1,2] Recently, bulk Si hyperdoped with chalcogens or transition metals has been demonstrated to be an appropriate intermediate-band material for Si-based short-wavelength infrared photodetectors.[3-5] Intermediate-band nanowires could potentially be used instead of bulk materials to overcome the Shockley-Queisser limit and to improve efficiency in solar cells,[6-9] but fundamental scientific questions in hyperdoping Si nanowires require experimental verification. The development of a method for obtaining controlled hyperdoping levels at the nanoscale concomitant with the electrical activation of dopants is, therefore, vital to understanding these issues. Here, we show a CMOS-compatible technique based on non-equilibrium processing for the controlled doping of Si at the nanoscale with dopant concentrations several orders of magnitude greater than the equilibrium solid solubility. Through the nanoscale spatially controlled implantation of dopants, and a bottom-up template-assisted solid phase recrystallization of the nanowires with the use of millisecond-flash lamp annealing, we form Se-hyperdoped Si/SiO2 core/shell nanowires that have a room-temperature sub-band gap optoelectronic photoresponse when configured as a photoconductor device.
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