低补偿绝缘（Ga，Mn）As中的电子相分离：超顺磁性和跳跃导电
Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction
摘要：
本文采用离子注入结合脉冲激光熔化的方法获得了Mn含量为0.7%的低补偿绝缘（Ga，Mn）As。样品表现出变程跳跃输运行为，在费米能级附近存在库仑能隙，外加磁场降低了激活能。观察到的是阻塞超顺磁性，而不是铁磁性。低于阻断温度时，样品表现出巨大的负磁阻效应。我们的研究证实了在Mn浓度处于绝缘体-金属过渡区的（Ga，Mn）As样品中发生了无序诱导的电子相分离，它可以解释所观察到的超顺磁性和庞磁电阻。
英文摘要：
In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn is obtained by ion implantation combined with pulsed laser melting. The sample shows variable-range hopping transport behavior with a Coulomb gap in the vicinity of the Fermi energy, and the activation energy is reduced by an external magnetic field. A blocking super-paramagnetism is observed rather than ferromagnetism. Below the blocking temperature, the sample exhibits a colossal negative magnetoresistance. Our studies confirm that the disorder-induced electronic phase separation occurs in (Ga,Mn)As samples with a Mn concentration in the insulator-metal transition regime, and it can account for the observed superparamagnetism and the colossal magnetoresistance.
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