铁电场效应管亚阈值斜率陡的另一种解释
Alternative explanation for the steep subthreshold slope in Ferroelectric FETs
摘要：
多年来，在铁电FET中已经报道了低于60 mV/decade的开关。然而，到目前为止，这些报告缺乏完整的物理解释，因为它们通常使用铁电层中的负电容来解释实验观察结果。由于负电容本身不是一个物理概念，我们提出了一个替代模型，依赖于铁电层的非线性和非平衡行为。它示出了一个陡峭的亚阈值斜率可以通过一个2步开关过程，称为成核和传播。利用畴壁运动的概念，也从断裂动力学，我们能够解释陡坡效应。添加一个简单的数学模型来进一步描述这种现象，并进一步研究其在亚10纳米时代获得陡斜率晶体管的最终好处。
英文摘要：
Since many years, sub-60mV/decade switching has been reported in ferroelectric FETs. However, thus far these reports have lacked full physical explanation since they typically use a negative capacitance in the ferroelectric layer to be able to explain the experimental observations. Because negative capacitance as such is not a physical concept, we propose an alternative model that relies on the non-linear and non-equilibrium behavior of the ferroelectric layer. It is shown that a steep subthreshold slope can be obtained by a 2-step switching process, referred to as nucleation and propagation. Making use of the concept of domain wall motion as known also from fracture dynamics, we are able to explain the steep slope effect. A simple mathematical model is added to further describe this phenomenon, and to further investigate its eventual benefit for obtaining steep slope transistors in the sub-10nm era.
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