Recently large Rashba-like spin splitting has been observed in certain bulk ferroelectrics. In contrast with the relativistic Rashba effect, the chiral spin texture and large spin-splitting of the electronic bands depend strongly on the character of the band and atomic spin-orbit coupling. We establish that this can be traced back to the so-called orbital Rashba effect, also in the bulk. This leads to an additional dependence on the orbital composition of the bands, which is crucial for a complete picture of the effect. Results from first-principles calculations on ferroelectic GeTe verify the key predictions of the model.
GeTe has been proposed as the father compound of a new class of functional materials displaying bulk Rashba effects coupled to ferroelectricity: ferroelectric Rashba semiconductors. In nice agreement with first principle calculations, we show by angular resolved photoemission and piezo-force microscopy that GeTe displays surface and bulk Rashba bands arising from the intrinsic inversion symmetry breaking provided by the remanent ferroelectric polarization. This work points to the possibility to control the spin chirality of bands in GeTe by acting on its ferroelectric polarization.
It has been recently suggested that the coexistence of ferroelectricity and Rashba-like spin-splitting effects due to spin-orbit coupling in a single material may allow for a non-volatile electric control of spin degrees of freedom. In the present work, we compared the structural and ferroelectric properties of tetragonal and rhombohedral phases of ferroelectric BiAlO$_3$ by means of density-functional calculations. In both phases, we carefully investigated Rashba and Dresselhaus effects, giving rise to spin-splitting in their bulk electronic structure, particularly near the conduction band mi…
One of the exciting features of two-dimensional (2D) materials is their electronic and optical tunability through strain engineering. Previously, we found a class of 2D ferroelectric Rashba semiconductors PbX (X = S, Se, Te) with tunable spin-orbital properties. In this work, based on our previous tight-binding (TB) results, we derive an effective low-energy Hamiltonian around the symmetry points that captures the effects of strain on the electronic properties of PbX. We find that strains induce gauge fields which shift the Rashba point and modify the Rashba parameter. This effect is equivalen…
The momentum-dependent Rashba and Dresselhaus spin-splitting has gained much attention for its highly promising applications in spintronics. In the present work, ab initio density functional theory calculations are performed to study the spin-splitting effect in ferroelectric oxide perovskite KIO3. Our calculations are additionally supported by symmetry adapted two-band k.p Hamiltonian. Non-negligible spin-splitting effect is observed at conduction band minimum (CBm) and valence band maximum (VBM) for rhombohedral R3m and R3c phases. Linear Rashba terms successfully explain the splitting at VB…
Ferroelectric Rashba semiconductors (FERSC), in which Rashba spin-splitting can be controlled and reversed by an electric field, have recently emerged as a new class of functional materials useful for spintronic applications. The development of concrete devices based on such materials is, however, still hampered by the lack of robust FERSC compounds. Here, we show that the coexistence of large spontaneous polarisation and sizeable spin-orbit coupling is not sufficient to have strong Rashba effects and clarify why simple ferroelectric oxide perovskites with transition metal at the B-site are ty…
Two-dimensional (2D) hybrid organic-inorganic perovskites (HOIPs) are introducing new directions in the 2D materials landscape. The coexistence of ferroelectricity and spin-orbit interactions play a key role in their optoelectronic properties. We perform a detailed study on a recently synthesized ferroelectric 2D-HOIP, (AMP)PbI$_4$ (AMP = 4-aminomethyl-piperidinium). The calculated polarization and Rashba parameter are in excellent agreement with experimental values. We report a striking new effect, i.e., an extraordinarily large Rashba anisotropy that is tunable by ferroelectric polarization:…
By performing density functional theory (DFT) and Green's functions calculations, complemented by X-ray Photoemission Spectroscopy, we investigate the electronic structure of Fe/GeTe(111), a prototypical ferromagnetic/Rashba-ferroelectric interface. We reveal that such system exhibits several intriguing properties resulting from the complex interplay of exchange interaction, electric polarization and spin-orbit coupling. Despite a rather strong interfacial hybridization between Fe and GeTe bands, resulting in a complete suppression of the surface states of the latter, the bulk Rashba bands are…
Ferroelectric Rashba semiconductors (FERSC) have recently emerged as a promising class of spintronics materials. The peculiar coupling between spin and polar degrees of freedom responsible for several exceptional properties, including ferroelectric switching of Rashba spin texture, suggests that the electron's spin could be controlled by using only electric fields. In this regard, recent experimental studies revealing charge-to-spin interconversion phenomena in two prototypical FERSC, GeTe and SnTe, appear extremely relevant. Here, by employing density functional theory calculations, we invest…
A comprehensive mapping of the spin polarization of the electronic bands in ferroelectric a-GeTe(111) films has been performed using a time-of-flight momentum microscope equipped with an imaging spin filter that enables a simultaneous measurement of more than 10.000 data points (voxels). A Rashba type splitting of both surface and bulk bands with opposite spin helicity of the inner and outer Rashba bands is found revealing a complex spin texture at the Fermi energy. The switchable inner electric field of GeTe implies new functionalities for spintronic devices.
GeTe wins the renewed research interest due to its giant bulk Rashba spin orbit coupling (SOC), and becomes the father of a new multifunctional material, i.e., ferroelectric Rashba semiconductor. In the present work, we investigate Rashba SOC at the interface of the ferroelectric semiconductor superlattice GeTe(111)/InP(111) by using the first principles calculation. Contribution of the interface electric field and the ferroelectric field to Rashba SOC is revealed. A large modulation to Rashba SOC and a reversal of the spin polarization is obtained by switching the ferroelectric polarization. …
We present a class of Rashba systems in hexagonal semiconducting compounds, where an electrical control over spin-orbital texture is provided by their bulk ferroelectricity. Our first-principles calculations reveal a number of such materials with large Rashba coefficients. We, furthermore, show that strain can drive a topological phase transition in such materials, resulting in a ferroelectric topological insulating state. Our findings can open avenues for interplay between Rashba effect, ferroelectricity and topological phenomena.
The control of the electron spin by external means is a key issue for spintronic devices. Using spin- and angle-resolved photoemission spectroscopy (SARPES) with three-dimensional spin detection, we demonstrate operando electrostatic spin manipulation in ferroelectric GeTe and multiferroic Ge1-xMnxTe. We not only demonstrate for the first time electrostatic spin manipulation in Rashba semiconductors due to ferroelectric polarization reversal, but are also able to follow the switching pathway in detail, and show a gain of the Rashba-splitting strength under external fields. In multiferroic Ge1-…
Rashba materials have appeared as an ideal playground for spin-to-charge conversion in prototype spintronics devices. Among them, $α$-GeTe(111) is a non-centrosymmetric ferroelectric (FE) semiconductor for which a strong spin-orbit interaction gives rise to giant Rashba coupling. Its room temperature ferroelectricity was recently demonstrated as a route towards a new type of highly energy-efficient non-volatile memory device based on switchable polarization. Currently based on the application of an electric field, the writing and reading processes could be outperformed by the use of femtosecon…
Large Rashba effect efficiently tuned by an external electric field is highly desired for spintronic devices. Using first-principles calculations, we demonstrate that large Rashba splitting is locked at conduction band minimum in ferroelectric Bi(Sc/Y/La/Al/Ga/In)O3/PbTiO3 heterostructures where the position of Fermi level is precisely controlled via its stoichiometry. Fully reversible Rashba spin texture and drastic change of Rashba splitting strength with ferroelectric polarization switching are realized in the symmetric and asymmetric heterostructures, respectively. By artificially tuning t…
The discovery of novel properties, effects or microscopic mechanisms in modern materials science is often driven by the quest for combining, into a single compound, several functionalities: not only the juxtaposition of the latter functionalities, but especially their coupling, can open new horizons in basic condensed matter physics as well as in technology. Semiconductor spintronics makes no exception. In this context, we have discovered by means of density-functional simulations that, when a sizeable spin-orbit coupling is combined with ferroelectricity, such as in GeTe, one obtains novel mu…
$α$-GeTe(111) is a non-centrosymmetric ferroelectric material, for which a strong spin-orbit interaction gives rise to giant Rashba split states in the bulk and at the surface. The detailed dispersions of the surface states inside the bulk band gap remains an open question because they are located in the unoccupied part of the electronic structure, making them inaccessible to static angle-resolved photoemission spectroscopy. We show that this difficulty can be overcome via in-situ potassium doping of the surface, leading to a rigid shift of 80 meV of the surface states into the occupied states…
Spin-orbit coupling (SOC) in conjunction with broken inversion symmetry acts as a key ingredient for several intriguing quantum phenomena viz. persistent spin textures, topological surface states and Rashba-Dresselhaus (RD) effects. The coexistence of spontaneous polarization and the RD effect in ferroelectric materials enables the electrical control of spin degree of freedom. In light of this, we explore here the ferroelectric lead halide perovskite viz. CsPbF$_3$ as a potential candidate in the field of spintronics by employing state-of-the-art first-principles based methodologies viz. densi…
In systems with broken inversion symmetry spin-orbit coupling (SOC) yields a Rashba-type spin splitting of electronic states, manifested in a k-dependent splitting of the bands. While most research had previously focused on 2D electron systems, recently a three-dimensional (3D) form of such Rashba-effect was found in a series of bismuth tellurohalides. Whereas these materials exhibit a very large spin-splitting, they lack an important property concerning functionalization, namely the possibility to switch or tune the spin texture. This limitation can be overcome in a new class of functional ma…
Spin-orbit coupling is increasingly seen as a rich source of novel phenomena, as shown by the recent excitement around topological insulators and Rashba effects. We here show that the addition of ferroelectric degrees of freedom to a semiconductor featuring topologically-non-trivial properties, such as SnTe, merges the intriguing field of spin-orbit-driven physics with non-volatile functionalities appealing for spintronics. By using a variety of modelling techniques, we show that a strikingly rich sequence of phases can be induced in SnTe, when going from a room-temperature cubic phase to a lo…
Ferroelectric Rashba semiconductors (FERSC) are a novel class of multifunctional materials showing a giant Rashba spin splitting which can be reversed by switching the electric polarization. Although they are excellent candidates as channels in spin field effect transistors, the experimental research has been limited so far to semiconducting GeTe, in which ferroelectric switching is often prevented by heavy doping and/or large leakage currents. Here, we report that CsBiNb2O7, a layered perovskite of Dion-Jacobson type, is a robust ferroelectric with sufficiently strong spin-orbit coupling and …
The electrical manipulation of spins in semiconductors, without magnetic fields or auxiliary ferromagnetic materials, represents the holy grail for spintronics. The use of Rashba effect is very attractive because the k-dependent spin-splitting is originated by an electric field. So far only tiny effects in two-dimensional electron gases (2DEG) have been exploited. Recently, GeTe has been predicted to have bulk bands with giant Rashba-like splitting, originated by the inversion symmetry breaking due to ferroelectric polarization. In this work, we show that GeTe(111) surfaces with inwards or out…
A non-vanishing electric field inside a non-centrosymmetric bulk crystal transforms into a momentum- dependent magnetic field, namely, a spin-orbit field (SOF). SOFs are of great use in spintronics because they enable spin manipulation via the electric field. At the same time, however, spintronic applications are severely limited by the SOF, as electrons traversing the SOF easily lose their spin information. Here, we propose that in-plane ferroelectricity in (001)-oriented SnTe thin films harness the Janus-faced SOF in a reconcilable way to enable electrical spin controllability and suppress s…
The interplay between electronic eigenstates, spin, and orbital degrees of freedom, combined with fundamental breaking of symmetries is currently one of the most exciting fields of research. Multiferroics such as (GeMn)Te fulfill these requirements providing unusual physical properties due to the coexistence and coupling between ferromagnetic and ferroelectric order in one and the same system. Here we show that multiferroic (GeMn)Te inherits from its parent ferroelectric α-GeTe compound a giant Rashba splitting of three-dimensional bulk states which competes with the Zeeman spin splitting indu…
Strong spin-orbit coupling in noncentrosymmetric materials and interfaces results in remarkable physical phenomena, such as nontrivial spin textures, which may exhibit Rashba, Dresselhaus, and other intricated configurations. This provides a promising basis for nonvolatile spintronic devices and further implications. Here, we simulate from first principles a two-dimensional electron gas in ultrathin platinum and palladium layers grown on ferroelectric PbTiO$_3$(001). The latter allows, in principle, to switch and control the spin-to-charge conversion by the polarization reversal. We show how t…
We theoretically propose the necessary conditions for realization of giant Rashba splitting in bulk systems. In addition to (i) the large atomic spin-orbit interaction in an inversion-asymmetric system, the following two conditions are further required; (ii) a narrow band gap, and (iii) the presence of top valence and bottom conduction bands of symmetrically the same character. As a representative example, using the first principles calculations, the recently discovered giant bulk Rashba splitting system BiTeI is shown to fully fulfill all these three conditions. Of particular importance, by p…
Composite quantum compounds (CQCs) have become an important avenue for the investigation of inter-correlation between two distinct phenomenon in physics. Topological superconductors, axion insulators etc. are few such CQCs which have recently drawn tremendous attention in the community. Topological nontriviality and Rashba spin physics are two different quantum phenomena but can be intertwined within a CQC platform. In this letter, we present a general symmetry based mechanism, supported by \textit{ab-initio} calculations to achieve intertwined giant Rashba splitting and topological non-trivia…
We report the preparation of the interface between graphene and the strong Rashba-split BiAg$_2$ surface alloy and investigatigation of its structure as well as the electronic properties by means of scanning tunneling microscopy/spectroscopy and density functional theory calculations. Upon evaluation of the quasiparticle interference patterns the unpertrubated linear dispersion for the $π$ band of $n$-doped graphene is observed. Our results also reveal the intact nature of the giant Rashba-split surface states of the BiAg$_2$ alloy, which demonstrate only a moderate downward energy shift upon …
Generating and controlling spin current (SC) are of central interest in spin physics and applications. To date, the spin-orbit interaction (SOI) is an established pathway to generate SC through the spin-charge current conversion. We predict an efficient spin-light conversion via the Rashba and higher-order cubic Dresselhaus SOIs in ferroelectrics. Different from the known Edelstein effect, where SC is created by the nonequilibrium spin density, our predicted spin-polarized current is from direct interactions between light and unique spin textures generated by SOI in ferroelectrics. Using first…
Experimentally it is still challenging to epitaxially grow Bi(111) bilayer (BL) on conventional semiconductor substrate. Here, we propose a substrate of $β-$In$_2$Se$_3$(0001) with van der Waals like cleavage and large band gap of 1.2~eV. We have investigated the electronic structure of BL on one quintuple-layer (QL) $β-$In$_2$Se$_3$(0001) using density functional theory calculation. It is found that the intermediate hybridization between BL and one QL $β-$In$_2$Se$_3$(0001) results in the formation of bands with giant Rashba spin splitting in the large band gap of the substrate. Furthermore t…
A large and ideal Rashba-type spin-orbit splitting is desired for the applications of materials in spintronic devices and the detection of Majorana Fermions in solids. Here, we propose an approach to achieve giant and ideal spin-orbit splittings through a combination of ordered surface alloying and interface engineering, that is, growing alloy monolayers on an insulating polar surface. We illustrate this unique strategy by means of first-principles calculations of buckled hexagonal monolayers of SbBi and PbBi supported on Al$_2$O$_3$(0001). Both systems display ideal Rashba-type states with gi…
In layered polar semiconductor BiTeI, giant Rashba-type spin-split band dispersions show up due to the crystal structure asymmetry and the strong spin-orbit interaction. Here we investigate the 3-dimensional (3D) bulk band structures of BiTeI using the bulk-sensitive $hν$-dependent soft x-ray angle resolved photoemission spectroscopy (SX-ARPES). The obtained band structure is shown to be well reproducible by the first-principles calculations, with huge spin splittings of ${\sim}300$ meV at the conduction-band-minimum and valence-band-maximum located in the $k_z=π/c$ plane. It provides the firs…
The search for strongly inversion asymmetric topological insulators is an active research field because these materials possess distinct properties compared with the inversion symmetric ones. In particular, it is desirable to realize a large Rashba spin-splitting (RSS) in such materials, which combined with the topological surface states (TSS) could lead to useful spintronics applications. In this report, based on first principles calculations, we predict that the heterostructure of BiTeI/Bi$_{2}$Te$_{3}$ is a strong topological insulator with a giant RSS. The coexistence of TSS and RSS in the…
Giant electrocaloric (EC) effect is observed in BaTiO3 multilayer thick film structure. The temperature change is as high as 4.0 oC under an applied electric field of 352 kV/cm. Most importantly, the EC effect is found to depend on the varying rate of the applied field. Based on the giant net cooling (~0.37 J/g) resulting from the difference in the varying rates of rising and falling fields, the kinetic EC effect provides an effective solution for the design of refrigeration cycle in ferroelectric micro-refrigerator.
Spintronics is aimed at active controlling and manipulating the spin degrees of freedom in semiconductor devices. A promising way to achieve this goal is to make use of the tunable Rashba effect that relies on the spin-orbit interaction (SOI) in a two-dimensional (2D) electron system immersed in an inversion-asymmetric environment. The SOI induced spin-splitting of the 2D-electron state provides a basis for many theoretically proposed spintronic devices. However, the lack of semiconductors with large Rashba effect hinders realization of these devices in actual practice. Here we report on a gia…
Ferroelectrics subject to suitable electric boundary conditions present a steady negative capacitance response. When the ferroelectric is in a heterostructure, this behavior yields a voltage amplification in the other elements, which experience a potential difference larger than the one applied, holding promise for low-power electronics. So far research has focused on verifying this effect and little is known about how to optimize it. Here we describe an electrostatic theory of ferroelectric/dielectric superlattices, convenient model systems, and show the relationship between the negative perm…
We have recently observed a giant electrocaloric effect (12 K in 25 V) in 350 nm sol-gel Pb Zr_0.95 Ti_0.05 O_3 films near the ferroelectric Curie temperature of 242oC. Here we demonstrate a giant electrocaloric effect (5 K in 25 V) in 260 nm sol-gel films of the relaxor ferroelectric 0.9 PbMg_(1/3)Nb_(2/3)O_3 - 0.1 PbTiO_3 near the Curie temperature of 60oC. This reduction in operating temperature widens the potential for applications in novel cooling systems.
Molecular dynamics simulations predict a giant electrocaloric effect at the ferroelectric-antiferroelectric phase boundary in PZT (PbTiO$_3$-PbZrO$_3$). These large-scale simulations also give insights into the atomistic mechanisms of the electrocaloric effect in PZT materials. Studying a range of ferroelectric (FE) and antiferroelectric (AFE) PZT materials we found positive electrocaloric effect in FE composites, but AFE ones exhibit a positive-to-negative crossover. At the AFE-FE phase boundary we find complex domain patterns. We demonstrate that the origin of giant electrocaloric change of …
Laser-Induced Rashba Spin-Orbit Torques in Multiferroic Semiconductor (Ge,Mn)Te
Charles University（查理大学）；Institute of Physics ASCR, v.v.i.（捷克科学院物理研究所）；Johannes Kepler Universität（约翰内斯·开普勒大学）；École Polytechnique Fédérale de Lausanne（洛桑联邦理工学院）；Paul Scherrer Institut（保罗谢尔研究所）
One of the most fundamental phenomena and a reminder of the electron's relativistic nature is the Rashba spin splitting for broken inversion symmetry. Usually this splitting is a tiny relativistic correction, hardly discernible in experiment. Interfacing a ferroelectric, BaTiO$_3$, and a heavy 5$d$ metal with a large spin-orbit coupling, Ba(Os,Ir)O$_3$, we show that giant Rashba spin splittings are indeed possible and even fully controllable by an external electric field. Based on density functional theory and a microscopic tight binding understanding, we conclude that the electric field is am…
Spin-orbit coupling effects occurring in non-centrosymmetric materials are known to be responsible for non-trivial spin configurations and a number of emergent physical phenomena. Ferroelectric materials may be especially interesting in this regard due to reversible spontaneous polarization making possible for a non-volatile electrical control of the spin degrees of freedom. Here, we explore a technologically relevant oxide material, HfO2, which has been shown to exhibit robust ferroelectricity in a non-centrosymmetric orthorhombic phase. Using theoretical modelling based on density-functional…
We elucidate the microscopic mechanism that causes a suppression of ferroelectricity and an enhancement of octahedral rotations in EuTiO3 from first principles. We find that the hybridization of the rare-earth Eu 4f states with the B-site Ti cation drives the system away from ferroelectricity. We also show that the magnetic order dependence of this hybridization is the dominant source of spin-phonon coupling in this material. Our results underline the importance of rare-earth f electrons on the lattice dynamics and stability of these transition metal oxides.
The non-centrosymmetric semiconductors BiTeX (X = Cl, Br, I) show large Rashba-type spin-orbit splittings in their electronic structure making them candidate materials for spin-based electronics. However, BiTeI(0001) single crystal surfaces usually consist of stacking-fault-induced domains of Te and I terminations implying a spatially inhomogeneous electronic structure. Here we combine scanning tunneling microscopy (STM), photoelectron spectroscopy (ARPES, XPS) and density functional theory (DFT) calculations to systematically investigate the structural and electronic properties of BiTeX(0001)…
Rashba spin-orbit splitting in the magnetic materials opens up a new perspective in the field of spintronics. Here, we report a giant Rashba-type spin-orbit effect on PrGe [010] surface in the paramagnetic phase with Rashba coefficient α_R=5 eVÅ. Significant changes in the electronic band structure has been observed across the phase transitions from paramagnetic to antiferromagnetic (44 K) and from antiferromagnetic to the ferromagnetic ground state (41.5 K). We find that Pr 4f states in PrGe is strongly hybridized with the Pr 5d and Ge 4s-4p states near the Fermi level. The behavior of Rashba…
Electronic states on the Bi/InAs(110)-(2$\times$1) surface and its spin-polarized structure are revealed by angle-resolved photoelectron spectroscopy (ARPES), spin-resolved ARPES, and density-functional-theory calculation. The surface state showed quasi-one-dimensional (Q1D) dispersion and a nearly metallic character; the top of the hole-like surface band is just below the Fermi level. The size of the Rashba parameter ($α_{\rm R}$) reached quite a large value ($\sim$5.5 eVÅ). The present result would provide a fertile playground for further studies of the exotic electronic phenomena in 1D or Q…
We report a giant Rashba-type spin splitting in two-dimensional heterostructure PtSe$_2$/MoSe$_2$ with first-principles calculations. We obtain a large value of spin splitting energy 110 meV at the momentum offset $k_0$=0.23 Å$^{-1}$ around $\mathrmΓ$ point, arising from the emerging strong interfacial spin-orbital coupling induced by the hybridization between PtSe$_2$ and MoSe$_2$. Moreover, we find that the band dispersion close to valence band maximum around $Γ$ point can be well approximated by the generalized Rashba Hamiltonian $H(k_{||})=-\frac{\hbar^2 k_{||}^2}{2m}+c k_{||}+α_R \vecσ\cd…
We report measurements of Shubnikov-de Haas oscillations in the giant Rashba semiconductor BiTeI under applied pressures up to $\sim 2\,\mathrm{GPa}$. We observe one high frequency oscillation at all pressures and one low frequency oscillation that emerges between $\sim 0.3-0.7\,\mathrm{GPa}$ indicating the appearance of a second small Fermi surface. BiTeI has a conduction band bottom that is split into two sub-bands due to the strong Rashba coupling, resulting in a `Dirac point'. Our results suggest that the chemical potential starts below the Dirac point in the conduction band at ambient pre…
The synthesis of layered ferrite-lead titanate zirconate (PZT) and lanthanum nanganite-PZT and the observation of giant magneto-electric interactions are discussed. The ferrites used in our studies included pure and Zn substituted cobalt-, nickel- and lithium ferrites. Ferromagnetic manganites used included both calcium and strontium substituted systems. The samples were prepared from 10-40 mm thick films obtained by tape-casting. Our studies showed strong ME coupling in manganite-PZT and cobalt zinc ferrite-PZT, and a giant ME effect in nickel zinc ferrite-PZT. We found evidence for Zn assist…
Giant photostriction in lead-free ferroelectric stemming from photo-excited thermalized carriers
Université Paris-Saclay, CentraleSupélec（巴黎萨克雷大学、中央理工-高等电力学院）；CNRS, Laboratoire SPMS（法国国家科学研究中心，SPMS实验室）；ENS Paris-Saclay（巴黎萨克雷高等师范学院）；LuMIn；Centre de Nanosciences et de Nanotechnologies (C2N)（纳米科学与工程中心）；Le Mans Université（勒芒大学）；Institut des Molécules et Matériaux du Mans（勒芒分子与材料研究所）；FZU- Institute of Physics, Czech Academy of Sciences（捷克科学院物理研究所）
The bulk photovoltaic effect (BPVE) refers to the phenomenon of generating photocurrent or photovoltage in homogeneous noncentrosymmetric materials under illumination, and the intrinsic contribution to the BPVE is known as the shift current effect. We calculate the shift current conductivities of the ferroelectric SnTe monolayer using first-principles methods. We find that the monolayer SnTe has giant shift-current conductivity near the valley points. More remarkably, the linear optical absorption coefficient at this energy is very small, and therefore leads to an enormous Glass coefficient th…
Graphene in spintronics has so far primarily meant spin current leads of high performance because the intrinsic spin-orbit coupling of its pi-electrons is very weak. If a large spin-orbit coupling could be created by a proximity effect, the material could also form active elements of a spintronic device such as the Das-Datta spin field-effect transistor, however, metal interfaces often compromise the band dispersion of massless Dirac fermions. Our measurements show that Au intercalation at the graphene-Ni interface creates a giant spin-orbit splitting (~100 meV) in the graphene Dirac cone up t…
By means of density functional theory calculations, we predict that several two dimensional AB binary monolayers, where A and B atoms belong to group IV or III-V, are ferroelectric. Dipoles arise from the buckled structure, where the A and B ions are located on the sites of a bipartite corrugated honeycomb lattice with trigonal symmetry. We discuss the emerging valley-dependent properties and the coupling of spin and valley physics, which arise from the loss of inversion symmetry, and explore the interplay between ferroelectricity and Rashba spin-spitting phenomena. We show that valley-related…
